发明授权
- 专利标题： Semiconductor device and a method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10985049申请日： 2004-11-10
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公开(公告)号： US07468294B2公开(公告)日： 2008-12-23
- 发明人: Masashi Yamaura , Hirokazu Nakajima , Nobuyoshi Maejima , Mikio Negishi , Tomio Yamada , Tomomichi Koizumi , Tsuneo Endoh
- 申请人： Masashi Yamaura , Hirokazu Nakajima , Nobuyoshi Maejima , Mikio Negishi , Tomio Yamada , Tomomichi Koizumi , Tsuneo Endoh
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Mattingly, Stanger, Malur & Brundidge, PC
- 优先权： JP2001-002371 20010110
- 主分类号： H01L21/50
- IPC分类号： H01L21/50 ; H01L21/48 ; H01L21/44 ; H01L23/52 ; H01L23/48 ; H01L23/40
摘要：
A semiconductor device comprising semiconductor chips each formed with plural pads at the main surface, chip parts each formed with connection terminals at both ends thereof, a module substrate on which the semiconductor chips and the chip parts are mounted, solder connection portions for connecting the chip parts and the substrate terminals of the module substrate by soldering, gold wires for connecting the pads of the semiconductor chips and corresponding substrate terminals of the module substrate, and a sealing portion formed with a low elasticity resin such as an insulative silicone resin or a low elasticity epoxy resin for covering the semiconductor chips, chip parts, solder connection portions and gold wires which prevents flow out of the solder in the solder connection portion by re-melting thereby preventing short-circuit.