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公开(公告)号：US07075183B2
公开(公告)日：2006-07-11
申请号：US09880733
申请日：2001-06-12
申请人： Tasao Soga , Hanae Shimokawa , Tetsuya Nakatsuka , Kazuma Miura , Mikio Negishi , Hirokazu Nakajima , Tsuneo Endoh
发明人： Tasao Soga , Hanae Shimokawa , Tetsuya Nakatsuka , Kazuma Miura , Mikio Negishi , Hirokazu Nakajima , Tsuneo Endoh
IPC分类号： H01L29/40
CPC分类号： H01L24/13 , B32B15/01 , C22C5/02 , C22C9/02 , C22C11/06 , C22C13/00 , H01L21/50 , H01L21/56 , H01L21/563 , H01L23/10 , H01L23/3128 , H01L23/3677 , H01L23/4334 , H01L23/4924 , H01L23/49513 , H01L24/11 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/97 , H01L25/16 , H01L2224/0401 , H01L2224/06102 , H01L2224/11334 , H01L2224/1134 , H01L2224/1147 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16235 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/29294 , H01L2224/29298 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/81024 , H01L2224/81054 , H01L2224/81203 , H01L2224/81205 , H01L2224/8121 , H01L2224/81409 , H01L2224/81815 , H01L2224/8319 , H01L2224/83801 , H01L2224/97 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01088 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/15738 , H01L2924/1576 , H01L2924/15787 , H01L2924/16152 , H01L2924/16315 , H01L2924/166 , H01L2924/181 , H01L2924/18301 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H05K1/141 , H05K3/3463 , H05K3/3484 , H05K2201/0215 , H05K2201/045 , H05K2201/09572 , H05K2201/10636 , Y02P70/611 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/01031 , H01L2924/01026 , H01L2924/3512 , H01L2924/00015 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/83205
摘要： Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu etc. and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.
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公开(公告)号：US20060145352A1
公开(公告)日：2006-07-06
申请号：US11338529
申请日：2006-01-23
申请人： Tasao Soga , Hanae Hata , Tetsuya Nakatsuka , Mikio Negishi , Hirokazu Nakajima , Tsuneo Endoh
发明人： Tasao Soga , Hanae Hata , Tetsuya Nakatsuka , Mikio Negishi , Hirokazu Nakajima , Tsuneo Endoh
IPC分类号： H01L23/48
CPC分类号： H05K3/3484 , B23K35/0244 , B23K35/262 , H01L24/73 , H01L2224/05568 , H01L2224/05573 , H01L2224/1134 , H01L2224/13144 , H01L2224/13147 , H01L2224/16 , H01L2224/16235 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/49171 , H01L2224/73204 , H01L2224/73265 , H01L2924/00013 , H01L2924/01012 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01087 , H01L2924/01322 , H01L2924/01327 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H05K1/141 , H05K3/3463 , H05K2201/0215 , H05K2201/0218 , H05K2201/045 , H05K2201/10636 , Y02P70/611 , H01L2924/00014 , H01L2224/13099 , H01L2924/00 , H01L2924/00012 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05669
摘要： In an electronic device which realizes high-temperature-side solder bonding in temperature-hierarchical bonding, a bonding portion between a semiconductor device and a substrate is formed of metal balls made of Cu, or the like, and compounds formed of metal balls and Sn, and the metal balls are bonded together by the compounds.
摘要翻译： 在实现温度分级接合中的高温侧焊接的电子设备中，半导体器件与衬底之间的接合部分由Cu等金属球形成，并且由金属球和Sn形成的化合物 ，金属球通过化合物结合在一起。
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公开(公告)号：US07023706B2
公开(公告)日：2006-04-04
申请号：US10323818
申请日：2002-12-20
申请人： Mikio Negishi , Hiroki Noto , Tomio Yamada , Tsuneo Endoh
发明人： Mikio Negishi , Hiroki Noto , Tomio Yamada , Tsuneo Endoh
CPC分类号： H01L23/36 , H01L25/165 , H01L2224/16225 , H01L2924/01057 , H01L2924/13091 , H01L2924/15311 , H01L2924/1532 , H01L2924/19105 , H01L2924/19106
摘要： A semiconductor device capable of attaining the reduction of size is disclosed. The semiconductor device comprises a module substrate having a surface and a back surface, a control chip mounted on the surface of the module substrate, plural chip parts mounted on the surface in adjacency to the control chip, first and second output chips mounted on the back surface of the module substrate, plural lands formed on the back surface of the module substrate, and a seal portion formed of resin to seal the control chip and the plural chip parts, wherein the first and second output chips are larger in the amount of heat generated than the control chip, the heat from the first and second output ships is radiated to a mother board, and packaging parts on the surface side of the module substrate are sealed with only a sealing resin without using a metallic case or the like to attain the reduction in size of the module.
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公开(公告)号：US20050082683A1
公开(公告)日：2005-04-21
申请号：US10985049
申请日：2004-11-10
申请人： Masashi Yamaura , Hirokazu Nakajima , Nobuyoshi Maejima , Mikio Negishi , Tomio Yamada , Tomomichi Koizumi , Tsuneo Endoh
发明人： Masashi Yamaura , Hirokazu Nakajima , Nobuyoshi Maejima , Mikio Negishi , Tomio Yamada , Tomomichi Koizumi , Tsuneo Endoh
CPC分类号： H05K3/284 , H01L23/29 , H01L2224/05554 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/09701 , H01L2924/19105 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device comprising semiconductor chips each formed with plural pads at the main surface, chip parts each formed with connection terminals at both ends thereof, a module substrate on which the semiconductor chips and the chip parts are mounted, solder connection portions for connecting the chip parts and the substrate terminals of the module substrate by soldering, gold wires for connecting the pads of the semiconductor chips and corresponding substrate terminals of the module substrate, and a sealing portion formed with a low elasticity resin such as an insulative silicone resin or a low elasticity epoxy resin for covering the semiconductor chips, chip parts, solder connection portions and gold wires which prevents flow out of the solder in the solder connection portion by re-melting thereby preventing short-circuit.
摘要翻译： 一种半导体器件，包括在主表面上形成有多个焊盘的半导体芯片，各自形成有两端的连接端子的芯片部件，安装有半导体芯片和芯片部件的模块基板，用于连接芯片的焊接连接部 通过焊接来模块基板的部件和基板端子，用于连接半导体芯片的焊盘的金线和模块基板的相应的基板端子，以及由诸如绝缘硅树脂的低弹性树脂形成的密封部分 用于覆盖半导体芯片，芯片部件，焊料连接部分和金线的弹性环氧树脂，其通过再熔化防止焊料连接部分中的焊料流出，从而防止短路。
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公开(公告)号：US07468294B2
公开(公告)日：2008-12-23
申请号：US10985049
申请日：2004-11-10
申请人： Masashi Yamaura , Hirokazu Nakajima , Nobuyoshi Maejima , Mikio Negishi , Tomio Yamada , Tomomichi Koizumi , Tsuneo Endoh
发明人： Masashi Yamaura , Hirokazu Nakajima , Nobuyoshi Maejima , Mikio Negishi , Tomio Yamada , Tomomichi Koizumi , Tsuneo Endoh
CPC分类号： H05K3/284 , H01L23/29 , H01L2224/05554 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/09701 , H01L2924/19105 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device comprising semiconductor chips each formed with plural pads at the main surface, chip parts each formed with connection terminals at both ends thereof, a module substrate on which the semiconductor chips and the chip parts are mounted, solder connection portions for connecting the chip parts and the substrate terminals of the module substrate by soldering, gold wires for connecting the pads of the semiconductor chips and corresponding substrate terminals of the module substrate, and a sealing portion formed with a low elasticity resin such as an insulative silicone resin or a low elasticity epoxy resin for covering the semiconductor chips, chip parts, solder connection portions and gold wires which prevents flow out of the solder in the solder connection portion by re-melting thereby preventing short-circuit.
摘要翻译： 一种半导体器件，包括在主表面上形成有多个焊盘的半导体芯片，各自形成有两端的连接端子的芯片部件，安装有半导体芯片和芯片部件的模块基板，用于连接芯片的焊接连接部 通过焊接来模块基板的部件和基板端子，用于连接半导体芯片的焊盘的金线和模块基板的相应的基板端子，以及由诸如绝缘硅树脂的低弹性树脂形成的密封部分 用于覆盖半导体芯片，芯片部件，焊料连接部分和金线的弹性环氧树脂，其通过再熔化防止焊料连接部分中的焊料流出，从而防止短路。
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公开(公告)号：US07259465B2
公开(公告)日：2007-08-21
申请号：US10104826
申请日：2002-03-22
申请人： Tasao Soga , Hanae Shimokawa , Tetsuya Nakatsuka , Kazuma Miura , Mikio Negishi , Hirokazu Nakajima , Tsuneo Endoh
发明人： Tasao Soga , Hanae Shimokawa , Tetsuya Nakatsuka , Kazuma Miura , Mikio Negishi , Hirokazu Nakajima , Tsuneo Endoh
IPC分类号： H01L29/40
CPC分类号： H01L24/13 , B32B15/01 , C22C5/02 , C22C9/02 , C22C11/06 , C22C13/00 , H01L21/50 , H01L21/56 , H01L21/563 , H01L23/10 , H01L23/3128 , H01L23/3677 , H01L23/4334 , H01L23/4924 , H01L23/49513 , H01L24/11 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/97 , H01L25/16 , H01L2224/0401 , H01L2224/06102 , H01L2224/11334 , H01L2224/1134 , H01L2224/1147 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16235 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/29294 , H01L2224/29298 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/81024 , H01L2224/81054 , H01L2224/81203 , H01L2224/81205 , H01L2224/8121 , H01L2224/81409 , H01L2224/81815 , H01L2224/8319 , H01L2224/83801 , H01L2224/97 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01088 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/15738 , H01L2924/1576 , H01L2924/15787 , H01L2924/16152 , H01L2924/16315 , H01L2924/166 , H01L2924/181 , H01L2924/18301 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H05K1/141 , H05K3/3463 , H05K3/3484 , H05K2201/0215 , H05K2201/045 , H05K2201/09572 , H05K2201/10636 , Y02P70/611 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/01031 , H01L2924/01026 , H01L2924/3512 , H01L2924/00015 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/83205
摘要： Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, etc., and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.
摘要翻译： 形成在半导体器件和衬底之间的接合部包括Cu等的金属球，Sn和金属球的化合物以及金属球通过化合物结合在一起。
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公开(公告)号：US08022551B2
公开(公告)日：2011-09-20
申请号：US11399856
申请日：2006-04-07
申请人： Tasao Soga , Hanae Shimokawa , Tetsuya Nakatsuka , Kazuma Miura , Mikio Negishi , Hirokazu Nakajima , Tsuneo Endoh
发明人： Tasao Soga , Hanae Shimokawa , Tetsuya Nakatsuka , Kazuma Miura , Mikio Negishi , Hirokazu Nakajima , Tsuneo Endoh
IPC分类号： H01L29/40
CPC分类号： H01L24/13 , B32B15/01 , C22C5/02 , C22C9/02 , C22C11/06 , C22C13/00 , H01L21/50 , H01L21/56 , H01L21/563 , H01L23/10 , H01L23/3128 , H01L23/3677 , H01L23/4334 , H01L23/4924 , H01L23/49513 , H01L24/11 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/97 , H01L25/16 , H01L2224/0401 , H01L2224/06102 , H01L2224/11334 , H01L2224/1134 , H01L2224/1147 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16235 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/29294 , H01L2224/29298 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/81024 , H01L2224/81054 , H01L2224/81203 , H01L2224/81205 , H01L2224/8121 , H01L2224/81409 , H01L2224/81815 , H01L2224/8319 , H01L2224/83801 , H01L2224/97 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01088 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/15738 , H01L2924/1576 , H01L2924/15787 , H01L2924/16152 , H01L2924/16315 , H01L2924/166 , H01L2924/181 , H01L2924/18301 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H05K1/141 , H05K3/3463 , H05K3/3484 , H05K2201/0215 , H05K2201/045 , H05K2201/09572 , H05K2201/10636 , Y02P70/611 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/01031 , H01L2924/01026 , H01L2924/3512 , H01L2924/00015 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/83205
摘要： Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, or other materials and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.
摘要翻译： 在半导体器件和衬底之间形成的每一个接合点包括Cu的金属球或Sn的其它材料和化合物以及金属球，金属球通过化合物结合在一起。
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公开(公告)号：US20070031279A1
公开(公告)日：2007-02-08
申请号：US11399856
申请日：2006-04-07
申请人： Tasao Soga , Hanae Shimokawa , Tetsuya Nakatsuka , Kazuma Miura , Mikio Negishi , Hirokazu Nakajima , Tsuneo Endoh
发明人： Tasao Soga , Hanae Shimokawa , Tetsuya Nakatsuka , Kazuma Miura , Mikio Negishi , Hirokazu Nakajima , Tsuneo Endoh
IPC分类号： C22C9/02
CPC分类号： H01L24/13 , B32B15/01 , C22C5/02 , C22C9/02 , C22C11/06 , C22C13/00 , H01L21/50 , H01L21/56 , H01L21/563 , H01L23/10 , H01L23/3128 , H01L23/3677 , H01L23/4334 , H01L23/4924 , H01L23/49513 , H01L24/11 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/97 , H01L25/16 , H01L2224/0401 , H01L2224/06102 , H01L2224/11334 , H01L2224/1134 , H01L2224/1147 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16235 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/29294 , H01L2224/29298 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/81024 , H01L2224/81054 , H01L2224/81203 , H01L2224/81205 , H01L2224/8121 , H01L2224/81409 , H01L2224/81815 , H01L2224/8319 , H01L2224/83801 , H01L2224/97 , H01L2924/00011 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01088 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/15738 , H01L2924/1576 , H01L2924/15787 , H01L2924/16152 , H01L2924/16315 , H01L2924/166 , H01L2924/181 , H01L2924/18301 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H05K1/141 , H05K3/3463 , H05K3/3484 , H05K2201/0215 , H05K2201/045 , H05K2201/09572 , H05K2201/10636 , Y02P70/611 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/01031 , H01L2924/01026 , H01L2924/3512 , H01L2924/00015 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/83205
摘要： Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, or other materials and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.
摘要翻译： 在半导体器件和衬底之间形成的每一个接合点包括Cu的金属球或Sn的其它材料和化合物以及金属球，金属球通过化合物结合在一起。
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公开(公告)号：US20050029666A1
公开(公告)日：2005-02-10
申请号：US10487990
申请日：2002-08-27
申请人： Yasutoshi Kurihara , Yoshimasa Takahashi , Tsuneo Endoh , Mikio Negishi , Masashi Yamaura , Hirokazu Nakajima , Yosuke Sakurai , Hironori Kodama
发明人： Yasutoshi Kurihara , Yoshimasa Takahashi , Tsuneo Endoh , Mikio Negishi , Masashi Yamaura , Hirokazu Nakajima , Yosuke Sakurai , Hironori Kodama
IPC分类号： B23K35/02 , B23K35/26 , H01L21/56 , H01L21/60 , H01L23/31 , H01L23/367 , H01L23/495 , H01L23/498 , H01L23/552 , H01L23/64 , H05K3/28 , H05K3/34 , H01L23/48
CPC分类号： H01L24/85 , B23K35/0244 , B23K35/262 , C04B37/026 , C04B2237/12 , C04B2237/123 , C04B2237/124 , C04B2237/125 , C04B2237/126 , C04B2237/127 , C04B2237/368 , C04B2237/401 , C04B2237/407 , C04B2237/708 , C04B2237/72 , H01L21/561 , H01L21/563 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/3677 , H01L23/49575 , H01L23/49805 , H01L23/552 , H01L23/642 , H01L24/01 , H01L24/13 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/97 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/133 , H01L2224/13339 , H01L2224/16145 , H01L2224/16225 , H01L2224/16237 , H01L2224/29209 , H01L2224/29211 , H01L2224/29213 , H01L2224/29218 , H01L2224/29223 , H01L2224/29239 , H01L2224/29244 , H01L2224/29247 , H01L2224/29249 , H01L2224/29255 , H01L2224/29264 , H01L2224/29266 , H01L2224/2927 , H01L2224/29272 , H01L2224/293 , H01L2224/29339 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/4912 , H01L2224/49175 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/81191 , H01L2224/81801 , H01L2224/85 , H01L2224/85203 , H01L2224/92 , H01L2224/97 , H01L2924/00014 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15174 , H01L2924/15311 , H01L2924/15787 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/35121 , H05K3/284 , H05K3/3442 , H05K3/3484 , H05K2201/0215 , H05K2201/10636 , Y02P70/611 , Y02P70/613 , H01L2924/01014 , H01L2924/01028 , H01L2224/83 , H01L2224/92247 , H01L2224/78 , H01L2924/00 , H01L2924/00012 , H01L2924/01029
摘要： A semiconductor device, in which a solder layer bonding chip parts and wiring members are enclosed with the resin layer, and the solder layer is comprised of a compound body in which metal powder is distributed in the matrix metal, is disclosed. When a semiconductor device in which the chip parts are installed in the wiring member with the solders, the soldering part is sealed with the resin is mounted secondly on the external wiring member, the outflow of the solders and the short circuit due to the outflow, the disconnections, and the displacement of the chip parts can be prevented.
摘要翻译： 公开了一种半导体器件，其中将粘合芯片部件和布线部件的焊料层封装在树脂层中，并且焊料层由金属粉末分布在基体金属中的复合体构成。 当将其中芯片部件与焊料一起安装在布线部件中的半导体器件时，将树脂密封的焊接部件二次安装在外部布线部件上，由于流出而导致焊料的流出和短路， 可以防止切断部件和芯片部件的位移。
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公开(公告)号：US06872465B2
公开(公告)日：2005-03-29
申请号：US10384931
申请日：2003-03-07
申请人： Tasao Soga , Hanae Hata , Tetsuya Nakatsuka , Mikio Negishi , Hirokazu Nakajima , Tsuneo Endoh
发明人： Tasao Soga , Hanae Hata , Tetsuya Nakatsuka , Mikio Negishi , Hirokazu Nakajima , Tsuneo Endoh
IPC分类号： B23K35/14 , B23K35/02 , B23K35/26 , H01L21/60 , H01L23/10 , H01L23/12 , H01L23/498 , H05K3/34 , B32B15/02
CPC分类号： H05K3/3484 , B23K35/0244 , B23K35/025 , B23K35/262 , H01L23/49816 , H01L24/73 , H01L24/81 , H01L2224/05548 , H01L2224/05568 , H01L2224/05573 , H01L2224/11334 , H01L2224/13022 , H01L2224/16225 , H01L2224/16235 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73204 , H01L2224/73265 , H01L2224/81801 , H01L2224/82 , H01L2224/85 , H01L2224/86 , H01L2924/01012 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01087 , H01L2924/01322 , H01L2924/01327 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/16152 , H01L2924/166 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H05K2201/0215 , Y10T428/12181 , Y10T428/12708 , Y10T428/12715 , Y10T428/12722 , Y10T428/1275 , Y10T428/12889 , Y10T428/12896 , Y10T428/1291 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： In a solder that realizes high-temperature-side solder bonding in temperature-hierarchical bonding, a connection portion between a semiconductor device and a substrate is formed of metal balls made of Cu or the like and compounds formed of metal balls and Sn, and the metal balls are bonded together by the compounds.
摘要翻译： 在实现温度分级接合中的高温侧焊料接合的焊料中，半导体器件与基板之间的连接部由金属球等构成的金属球和由金属球和Sn形成的化合物形成， 金属球通过化合物结合在一起。
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