A system and method for writing a SRAM cell coupled to complimentary first and second bit-lines (BLs) is disclosed, the method comprising asserting a word-line (WL) selecting the SRAM cell to a first positive voltage, providing a second positive voltage at the first BL, providing a first negative voltage at the second BL, and asserting a plurality of WLs not selecting the SRAM cell to a second negative voltage, wherein the writing margin of the SRAM cell is increased.