发明授权
US07473608B2 N-channel MOSFETs comprising dual stressors, and methods for forming the same
有权
包含双重应力的N沟道MOSFET及其形成方法
- 专利标题: N-channel MOSFETs comprising dual stressors, and methods for forming the same
- 专利标题(中): 包含双重应力的N沟道MOSFET及其形成方法
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申请号: US11840795申请日: 2007-08-17
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公开(公告)号: US07473608B2公开(公告)日: 2009-01-06
- 发明人: Jinghong H. Li , Yaocheng Liu , Zhijiong Luo , Anita Madan , Nivo Rovedo
- 申请人: Jinghong H. Li , Yaocheng Liu , Zhijiong Luo , Anita Madan , Nivo Rovedo
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号: H01L21/22
- IPC分类号: H01L21/22
摘要:
The present invention relates to a semiconductor device comprising at least one n-channel field effect transistor (n-FET). Specifically, the n-FET comprises first and second patterned stressor layers that both contain a carbon-substituted and tensilely stressed single crystal semiconductor. The first patterned stressor layer has a first carbon concentration and is located in source and drain (S/D) extension regions of the n-FET at a first depth. The second patterned stressor layer has a second, higher carbon concentration and is located in S/D regions of the n-FET at a second, deeper depth. Such an n-FET with the first and second patterned stressor layers of different carbon concentration and different depths provide improved stress profile for enhancing electron mobility in the channel region of the n-FET.