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发明授权
US07476917B2 Phase-changeable memory devices including nitrogen and/or silicon dopants 有权
包括氮和/或硅掺杂剂的相变存储器件

Phase-changeable memory devices including nitrogen and/or silicon dopants
摘要：
A phase-changeable memory device includes a substrate having a field effect transistor therein and a phase-changeable material electrically coupled to a source region of the field effect transistor. The phase-changeable material includes a chalcogenide composition containing at least germanium, bismuth and tellurium and at least one dopant selected from a group consisting of nitrogen and silicon.
摘要（中）：

相变存储器件包括其中具有场效应晶体管的衬底和电耦合到场效应晶体管的源极区的相变材料。 相变材料包括至少含有锗，铋和碲的硫族化物组合物和选自氮和硅的至少一种掺杂剂。

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