发明授权
- 专利标题: Delay-locked loop circuit of a semiconductor device and method of controlling the same
- 专利标题(中): 半导体器件的延迟锁定环路电路及其控制方法
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申请号: US11623925申请日: 2007-01-17
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公开(公告)号: US07477715B2公开(公告)日: 2009-01-13
- 发明人: Young-Yong Byun , Dong-Jin Lee , Hi-Choon Lee
- 申请人: Young-Yong Byun , Dong-Jin Lee , Hi-Choon Lee
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR10-2006-0009703 20060201
- 主分类号: H03D3/24
- IPC分类号: H03D3/24
摘要:
A delay-locked loop (DLL) circuit includes a standby signal generating circuit, a front stage circuit, and a back stage circuit. The standby signal generating circuit generates a first standby signal and a second standby signal in response to an active signal, a crock enable signal, a first column address strobe (CAS) latency signal, and a second CAS latency signal. The front stage circuit compares the phase of an external clock signal and the phase of a feedback signal and delays the external clock signal based on the phase difference between the external clock signal and the feedback signal to generate a first clock signal. The back stage circuit executes interpolation and duty-cycle correction on the first clock signal.
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