Invention Grant
US07479052B2 Method of growing carbon nanotubes and method of manufacturing field emission device using the same
失效
生长碳纳米管的方法及使用其制造场致发射器件的方法
- Patent Title: Method of growing carbon nanotubes and method of manufacturing field emission device using the same
- Patent Title (中): 生长碳纳米管的方法及使用其制造场致发射器件的方法
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Application No.: US11476653Application Date: 2006-06-29
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Publication No.: US07479052B2Publication Date: 2009-01-20
- Inventor: Ha-Jin Kim , In-Taek Han
- Applicant: Ha-Jin Kim , In-Taek Han
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung SDI Co., Ltd.
- Current Assignee: Samsung SDI Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2005-0122426 20051213
- Main IPC: H01J9/00
- IPC: H01J9/00 ; D01F9/12 ; C23C16/00

Abstract:
Methods of growing carbon nanotubes and manufacturing a field emission device using the carbon nanotubes are provided. The method of growing carbon nanotubes includes the steps of preparing a substrate, forming a catalyst metal layer on the substrate to promote the growing of the carbon nanotubes, forming an amorphous carbon layer on the catalyst metal layer where the amorphous carbon layer partially covers the catalyst metal layer, and growing the carbon nanotubes from a surface of the catalyst metal layer. The carbon nanotubes are grown in a portion of the surface of the catalyst metal layer that is not covered by the amorphous carbon layer. In the method of growing carbon nanotubes, the carbon nanotubes are grow at a low temperature. A density of carbon nanotubes can be controlled to improve field emission characteristics of an emitter of a field emission device.
Public/Granted literature
- US20080311818A1 METHOD OF GROWING CARBON NANOTUBES AND METHOD OF MANUFACTURING FIELD EMISSION DEVICE USING THE SAME Public/Granted day:2008-12-18
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