中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

28 records (took 0.018 seconds)

    Interlayer wiring of semiconductor device using carbon nanotube and method of manufacturing the same
    1.
    发明申请
    Interlayer wiring of semiconductor device using carbon nanotube and method of manufacturing the same 审中-公开
    使用碳纳米管的半导体器件的层间布线及其制造方法

    公开(公告)号：US20080211101A1

    公开(公告)日：2008-09-04

    申请号：US11785588

    申请日：2007-04-18

    Applicant: In-Taek Han ,  Ha-Jin Kim

    Inventor： In-Taek Han ,  Ha-Jin Kim

    IPC: H01L23/48 ,  H01L21/44

    CPC classification number: H01L21/76885 ,  B82Y10/00 ,  B82Y30/00 ,  H01L23/5226 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Provided is an interlayer wiring structure of a semiconductor device using carbon nanotubes, and a method of manufacturing the interlayer wiring structure. The interlayer wiring structure is a carbon nanotube bundle that connects a first electrode to a second electrode. The carbon nanotube bundle includes a plurality of carbon nanotubes grown from a catalyst layer that is formed on a first electrode. The carbon nanotube bundle is made in a manner that a portion of the carbon nanotube bundle close to the second electrode has higher density of carbon nanotubes than another portion of the carbon nanotube bundle close to the first electrode. The carbon nanotube bundle is surrounded by an interlayer dielectric. In one embodiment of a method of manufacturing the carbon nanotube interlayer wire, liquid droplets are distributed between the carbon nanotubes to induce surface tension between the carbon nanotubes. The surface tension makes the carbon nanotube bundle maintain higher density of carbon nanotubes in a portion close to the second electrode.

    Abstract translation: 提供了使用碳纳米管的半导体器件的层间布线结构以及制造层间布线结构的方法。 层间布线结构是将第一电极连接到第二电极的碳纳米管束。 碳纳米管束包括从形成在第一电极上的催化剂层生长的多个碳纳米管。 碳纳米管束的制造方式是使碳纳米管束靠近第二电极的部分比碳纳米管束的靠近第一电极的另一部分具有更高的碳纳米管密度。 碳纳米管束被层间电介质包围。 在制造碳纳米管夹层线的方法的一个实施例中，液滴分布在碳纳米管之间以引起碳纳米管之间的表面张力。 表面张力使得碳纳米管束在靠近第二电极的部分保持较高的碳纳米管密度。

    Method of preparing catalyst base for manufacturing carbon nanotubes and method of manufacturing carbon nanotubes employing the same
    2.
    发明申请
    Method of preparing catalyst base for manufacturing carbon nanotubes and method of manufacturing carbon nanotubes employing the same 审中-公开
    制备碳纳米管的催化剂底物的方法及其制造方法

    公开(公告)号：US20060067872A1

    公开(公告)日：2006-03-30

    申请号：US11171247

    申请日：2005-07-01

    Applicant: Ha-Jin Kim ,  In-Taek Han

    Inventor： Ha-Jin Kim ,  In-Taek Han

    IPC: D01F9/12 ,  B01J21/18

    CPC classification number: B01J37/086 ,  B01J21/185 ,  B01J23/12 ,  B01J23/22 ,  B01J23/28 ,  B01J23/70 ,  B82Y30/00 ,  D01F9/127

    Abstract: A novel method of forming a catalyst base that can control the growth density of carbon nanotubes and increase the uniformity of the carbon nanotubes and a method of synthesizing carbon nanotubes employing the method of forming the catalyst base are provided. A precursor paste containing a catalytic metal precursor, a solid and a vehicle is applied on a substrate; and the catalytic metal precursor of the precursor paste applied on the substrate is reduced to form catalytic metal particles. According to the present invention, the growth density of carbon nanotubes can be easily controlled and carbon nanotubes with smaller and uniform diameters can be formed.

    Abstract translation: 提供了形成能够控制碳纳米管的生长密度并增加碳纳米管的均匀性的催化剂基质的新方法和使用形成催化剂基底的方法合成碳纳米管的方法。 将含有催化金属前体，固体和载体的前体浆料涂覆在基材上; 并且将施加在基板上的前体浆料的催化金属前体还原以形成催化金属颗粒。 根据本发明，可以容易地控制碳纳米管的生长密度，并且可以形成具有更小和均匀直径的碳纳米管。

    Method of growing carbon nanotubes and method of manufacturing field emission device using the same
    7.
    发明授权
    Method of growing carbon nanotubes and method of manufacturing field emission device using the same 失效
    生长碳纳米管的方法及使用其制造场致发射器件的方法

    公开(公告)号：US07479052B2

    公开(公告)日：2009-01-20

    申请号：US11476653

    申请日：2006-06-29

    Applicant: Ha-Jin Kim ,  In-Taek Han

    Inventor： Ha-Jin Kim ,  In-Taek Han

    IPC: H01J9/00 ,  D01F9/12 ,  C23C16/00

    CPC classification number: H01J1/304 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/876

    Abstract: Methods of growing carbon nanotubes and manufacturing a field emission device using the carbon nanotubes are provided. The method of growing carbon nanotubes includes the steps of preparing a substrate, forming a catalyst metal layer on the substrate to promote the growing of the carbon nanotubes, forming an amorphous carbon layer on the catalyst metal layer where the amorphous carbon layer partially covers the catalyst metal layer, and growing the carbon nanotubes from a surface of the catalyst metal layer. The carbon nanotubes are grown in a portion of the surface of the catalyst metal layer that is not covered by the amorphous carbon layer. In the method of growing carbon nanotubes, the carbon nanotubes are grow at a low temperature. A density of carbon nanotubes can be controlled to improve field emission characteristics of an emitter of a field emission device.

    Abstract translation: 提供生长碳纳米管的方法和制造使用碳纳米管的场致发射器件。 生长碳纳米管的方法包括以下步骤：制备衬底，在衬底上形成催化剂金属层以促进碳纳米管的生长，在催化剂金属层上形成无定形碳层，其中无定形碳层部分覆盖催化剂 金属层，并从催化剂金属层的表面生长碳纳米管。 碳纳米管生长在未被无定形碳层覆盖的催化剂金属层表面的一部分中。 在生长碳纳米管的方法中，碳纳米管在低温下生长。 可以控制碳纳米管的密度以改善场致发射器件的发射极的场发射特性。

    Field emission display (FED) and method of manufacture thereof
    10.
    发明申请
    Field emission display (FED) and method of manufacture thereof 失效
    场发射显示（FED）及其制造方法

    公开(公告)号：US20050258729A1

    公开(公告)日：2005-11-24

    申请号：US11131222

    申请日：2005-05-18

    Applicant: In-Taek Han ,  Tae-Sik Oh ,  Ha-Jin Kim ,  Andrei Zoulkarneev ,  Jong-Min Kim

    Inventor： In-Taek Han ,  Tae-Sik Oh ,  Ha-Jin Kim ,  Andrei Zoulkarneev ,  Jong-Min Kim

    IPC: H01J31/12 ,  H01J1/00 ,  H01J1/02 ,  H01J1/14 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J9/04 ,  H01J9/12 ,  H01J29/06 ,  H01J29/48

    CPC classification number: B82Y10/00 ,  H01J9/025 ,  H01J29/06 ,  H01J29/481

    Abstract: A Field Emission Display (FED) and a method of manufacturing the FED are provided. The FED includes a substrate; a plurality of under-gate electrodes formed parallel to one another on a top surface of a substrate; a plurality of cathode electrodes formed perpendicular to the under-gate electrodes on an upper portion of the under-gate electrode, each of cathode holes being formed in portions of the cathode electrodes that intersect with the under-gate electrodes; a plurality of emitters formed symmetrical with respect to centers of the cathode holes on the cathode electrodes; and a plurality of gate electrodes formed to be electrically connected to the under-gate electrodes in central portions of the cathode holes.

    Abstract translation: 提供场发射显示（FED）和制造FED的方法。 FED包括底物; 在基板的上表面上彼此平行地形成的多个下栅极电极; 多个阴极，其在所述栅极下电极的上部垂直于所述栅极下电极形成，每个阴极孔形成在所述阴极电极的与所述栅极下电极相交的部分; 多个发射体相对于阴极电极上的阴极孔的中心对称地形成; 以及形成为与阴极孔的中央部的栅极下电极电连接的多个栅电极。

Patent Agency Ranking