Invention Grant
- Patent Title: Method for producing a semiconductor component and a semiconductor component produced according to the method
- Patent Title (中): 用于制造根据该方法制造的半导体部件和半导体部件的方法
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Application No.: US11221228Application Date: 2005-09-06
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Publication No.: US07479232B2Publication Date: 2009-01-20
- Inventor: Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaefer
- Applicant: Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaefer
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Kenyon & Kenyon LLP
- Priority: DE10032579 20000705
- Main IPC: H01L21/302
- IPC: H01L21/302 ; B81C1/00

Abstract:
A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.
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