Invention Grant
US07479232B2 Method for producing a semiconductor component and a semiconductor component produced according to the method 有权
用于制造根据该方法制造的半导体部件和半导体部件的方法

Method for producing a semiconductor component and a semiconductor component produced according to the method
Abstract:
A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.
Information query
Patent Agency Ranking
0/0