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    Method for manufacturing a semiconductor component and a semiconductor component, in particular a diaphragm sensor
    3.
    发明授权
    Method for manufacturing a semiconductor component and a semiconductor component, in particular a diaphragm sensor 有权
    用于制造半导体部件和半导体部件的方法，特别是膜片传感器

    公开(公告)号：US07679154B2

    公开(公告)日：2010-03-16

    申请号：US12001289

    申请日：2007-12-10

    申请人： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schäfer

    发明人： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schäfer

    IPC分类号： H01L29/84

    CPC分类号： B81C1/00182 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01L9/0042

    摘要： In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

    摘要翻译： 在制造具有半导体衬底的半导体部件的方法中，制造平坦的多孔隔膜层和多孔隔膜层下方的空腔，以形成用于部件的无支撑结构。 在第一种方法中，半导体衬底可以在膜片区域中接收不同于空腔的掺杂。 这允许产生不同的孔径和/或孔隙率，其用于制造用于改善蚀刻气体输送的空腔。 此外，可以在隔膜区域中产生介孔，并且可以在将要成为空腔区域的地方制造纳米孔作为辅助结构。

    Pressure sensor
    5.
    发明授权
    Pressure sensor 有权
    压力传感器

    公开(公告)号：US08196474B2

    公开(公告)日：2012-06-12

    申请号：US12846423

    申请日：2010-07-29

    申请人： Jochen Reinmuth ,  Peter Schmollngruber ,  Hans Artmann

    发明人： Jochen Reinmuth ,  Peter Schmollngruber ,  Hans Artmann

    IPC分类号： G01L7/00

    CPC分类号： G01L19/148 ,  G01L19/0061 ,  G01L19/147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/8592 ,  H01L2924/00014

    摘要： A simple to implement contacting variant makes it possible to create a reliable electrical connection between the sensor element and the evaluation electronics of a pressure sensor, including at least one media-resistant sensor element, evaluation electronics in the form of at least one additional component connected electrically to the sensor element, and a multipart housing, the sensor element being situated in a first housing area having at least one pressure connection, and the evaluation electronics being situated in a second sealed housing area which is separated from the first housing area by a separating wall. The electrical connection between the sensor element and the evaluation electronics is implemented in the form of media-resistant bonding wires which are guided from the first into the second housing area through the bonded joint area between the separating wall and an additional housing part.

    摘要翻译： 简单实现接触变体使得可以在传感器元件和压力传感器的评估电子器件之间创建可靠的电连接，包括至少一个耐介质传感器元件，至少一个附加部件连接形式的评估电子器件 电传送到传感器元件和多部分壳体，传感器元件位于具有至少一个压力连接的第一壳体区域中，并且评估电子设备位于第二密封壳体区域中，该第二密封壳体区域与第一壳体区域分离 分隔墙。 传感器元件和评估电子元件之间的电连接以不受介质影响的接合线的形式实现，该接合线通过隔离壁和附加壳体部分之间的接合接合区域从第一壳体引导到第二壳体区域。

    Pressure sensor
    7.
    发明申请
    Pressure sensor 有权
    压力传感器

    公开(公告)号：US20110048137A1

    公开(公告)日：2011-03-03

    申请号：US12846423

    申请日：2010-07-29

    申请人： Jochen REINMUTH ,  Peter Schmollngruber ,  Hans Artmann

    发明人： Jochen REINMUTH ,  Peter Schmollngruber ,  Hans Artmann

    IPC分类号： G01L7/00

    CPC分类号： G01L19/148 ,  G01L19/0061 ,  G01L19/147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/8592 ,  H01L2924/00014

    摘要： A simple to implement contacting variant makes it possible to create a reliable electrical connection between the sensor element and the evaluation electronics of a pressure sensor, including at least one media-resistant sensor element, evaluation electronics in the form of at least one additional component connected electrically to the sensor element, and a multipart housing, the sensor element being situated in a first housing area having at least one pressure connection, and the evaluation electronics being situated in a second sealed housing area which is separated from the first housing area by a separating wall. The electrical connection between the sensor element and the evaluation electronics is implemented in the form of media-resistant bonding wires which are guided from the first into the second housing area through the bonded joint area between the separating wall and an additional housing part.

    摘要翻译： 简单实现接触变体使得可以在传感器元件和压力传感器的评估电子器件之间创建可靠的电连接，包括至少一个耐介质传感器元件，至少一个附加部件连接形式的评估电子器件 电传送到传感器元件和多部分壳体，传感器元件位于具有至少一个压力连接的第一壳体区域中，并且评估电子设备位于第二密封壳体区域中，该第二密封壳体区域与第一壳体区域分离 分隔墙。 传感器元件和评估电子元件之间的电连接以不受介质影响的接合线的形式实现，该接合线通过隔离壁和附加壳体部分之间的接合接合区域从第一壳体引导到第二壳体区域。

    Structural element having a porous region at least regionally provided with a cover layer and its use as well as method for setting the thermal conductivity of a porous region
    8.
    发明授权
    Structural element having a porous region at least regionally provided with a cover layer and its use as well as method for setting the thermal conductivity of a porous region 失效
    具有至少区域地设置有覆盖层的多孔区域的结构元件及其用途以及用于设定多孔区域的热导率的方法

    公开(公告)号：US07709933B2

    公开(公告)日：2010-05-04

    申请号：US10742055

    申请日：2003-12-18

    申请人： Hans Artmann ,  Thorsten Pannek ,  Hans-Peter Trah ,  Franz Laermer

    发明人： Hans Artmann ,  Thorsten Pannek ,  Hans-Peter Trah ,  Franz Laermer

    IPC分类号： H01L31/036

    CPC分类号： C04B38/007 ,  B81C1/00492 ,  B81C2201/0115 ,  C04B2111/28 ,  C04B35/14

    摘要： A structural element having a region of porous silicon or porous silicon oxide, which was obtained from a porization, starting from an edge area of the region, in at least largely crystalline silicon. Relative to the edge area, the crystalline silicon has a crystal orientation that has an orientation that differs from a orientation or from an orientation that is equivalent for reasons of symmetry. This structural element is suited for use in a mass-flow sensor, in a component for the thermal decoupling of sensor and/or actuator structures, or a gas sensor. Furthermore, methods for setting the thermal conductivity of a region of porous silicon or porous silicon oxide of a structural element are described. In particular, in a porization of crystalline silicon, starting from an edge area of the region, the crystalline orientation of the silicon relative to the edge area is selected such that a thermal conductivity comes about along a direction perpendicular to the edge area that differs from, in particular is lower than, the thermal conductivity, that comes about in this direction in an otherwise analogous porization of crystalline silicon having a orientation or an equivalent orientation relative to this edge area.

    摘要翻译： 具有多孔硅或多孔氧化硅区域的结构元件，其从至少大部分为晶体硅的区域的边缘区域开始从孔化获得。 相对于边缘区域，晶体硅具有取向不同于<100>取向的晶体取向或者由于对称原因等同的取向。 该结构元件适用于质量流量传感器，用于传感器和/或致动器结构或气体传感器的热解耦的部件。 此外，描述了用于设定结构元件的多孔硅或多孔氧化硅区域的热导率的方法。 特别地，在从区域的边缘区域开始的晶体硅的孔化中，选择硅相对于边缘区域的晶体取向，使得热导率沿垂直于与边缘区域不同的边缘区域的方向 ，特别是低于导热率，其在相对于该边缘区域具有<100>取向或等同取向的晶体硅的另外类似的孔化中在该方向上。

    Sensor with at least one micromechanical structure, and method for producing it
    9.
    发明授权
    Sensor with at least one micromechanical structure, and method for producing it 有权
    具有至少一个微机械结构的传感器及其制造方法

    公开(公告)号：US07273764B2

    公开(公告)日：2007-09-25

    申请号：US11028370

    申请日：2005-01-03

    申请人： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

    发明人： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

    摘要： The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).

    摘要翻译： 本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个 传感器的制造方法 设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封 层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中 特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。