Invention Grant
US07479438B2 Method to improve performance of a bipolar device using an amorphizing implant
有权
使用非晶化植入物改善双极器件性能的方法
- Patent Title: Method to improve performance of a bipolar device using an amorphizing implant
- Patent Title (中): 使用非晶化植入物改善双极器件性能的方法
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Application No.: US11469032Application Date: 2006-08-31
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Publication No.: US07479438B2Publication Date: 2009-01-20
- Inventor: Alan S. Chen , Mark Dyson , Daniel C. Kerr , Nace M. Rossi
- Applicant: Alan S. Chen , Mark Dyson , Daniel C. Kerr , Nace M. Rossi
- Applicant Address: US PA Allentown
- Assignee: Agere Systems Inc.
- Current Assignee: Agere Systems Inc.
- Current Assignee Address: US PA Allentown
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L27/092
Abstract:
The invention, in one aspect, provides a semiconductor device that comprises a bipolar transistor located over and within a semiconductor substrate, a collector located within a tub of the bipolar transistor and having an amorphous region formed at least partially therein, a base located over the collector, and an emitter located over the base. There is also provided a method of fabricating the semiconductor device.
Public/Granted literature
- US20080054406A1 Method to Improve Performance of a Bipolar Device Using an Amorphizing Implant Public/Granted day:2008-03-06
Information query
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