发明授权
US07479667B2 Semiconductor device with modified mobility and thin film transistor having the same
失效
具有改性迁移率的半导体器件和具有该迁移率的薄膜晶体管
- 专利标题: Semiconductor device with modified mobility and thin film transistor having the same
- 专利标题(中): 具有改性迁移率的半导体器件和具有该迁移率的薄膜晶体管
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申请号: US11022756申请日: 2004-12-28
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公开(公告)号: US07479667B2公开(公告)日: 2009-01-20
- 发明人: Jang-yeon Kwon , Takashi Noguchi , Young-soo Park , Do-young Kim
- 申请人: Jang-yeon Kwon , Takashi Noguchi , Young-soo Park , Do-young Kim
- 申请人地址: KR Suwon-Si, Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si, Gyeonggi-Do
- 代理机构: Buchanan Ingersoll & Rooney PC
- 优先权: KR10-2003-0100494 20031230
- 主分类号: H01L29/76
- IPC分类号: H01L29/76 ; H01L29/745
摘要:
Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.
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