发明授权
US07479667B2 Semiconductor device with modified mobility and thin film transistor having the same 失效
具有改性迁移率的半导体器件和具有该迁移率的薄膜晶体管

Semiconductor device with modified mobility and thin film transistor having the same
摘要:
Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.
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