Invention Grant
- Patent Title: Low voltage circuit with variable substrate bias
- Patent Title (中): 具有可变衬底偏置的低压电路
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Application No.: US11424132Application Date: 2006-06-14
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Publication No.: US07479813B2Publication Date: 2009-01-20
- Inventor: Kiyoshi Kase , Dzung T. Tran , May Len
- Applicant: Kiyoshi Kase , Dzung T. Tran , May Len
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Daniel D. Hill; Robert L. King
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00

Abstract:
In one form a circuit has a bias stage having an input signal terminal for receiving an input signal. The circuit modifies the input signal with a drive stage to provide an output signal in complement form. A drive transistor in the drive stage of the circuit has a bulk that is connected to a terminal of a load and to a control electrode coupled to the input signal terminal. A bias transistor in the bias stage of the circuit has a bulk that is directly connected to the terminal of the load and to the bulk of the drive transistor. The bias transistor has a control electrode coupled to the input signal terminal. The input signal biases the bulks of the drive transistor and the bias transistor and reduces transistor threshold voltage. Linearity of circuit output impedance is improved and RF interference reduced. Lower voltage operation is also provided.
Public/Granted literature
- US20080122520A1 LOW VOLTAGE CIRCUIT WITH VARIABLE SUBSTRATE BIAS Public/Granted day:2008-05-29
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