发明授权
- 专利标题: Semiconductor device and power supply device using the same
- 专利标题(中): 半导体装置及使用该装置的电源装置
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申请号: US11585226申请日: 2006-10-24
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公开(公告)号: US07480163B2公开(公告)日: 2009-01-20
- 发明人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
- 申请人: Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2005-307999 20051024
- 主分类号: H02M1/00
- IPC分类号: H02M1/00
摘要:
A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
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