发明授权
US07480322B2 Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser
失效
电泵浦(Ga,In,Al)N垂直腔表面发射激光器
- 专利标题: Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser
- 专利标题(中): 电泵浦(Ga,In,Al)N垂直腔表面发射激光器
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申请号: US11803472申请日: 2007-05-15
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公开(公告)号: US07480322B2公开(公告)日: 2009-01-20
- 发明人: Daniel F. Feezell , Daniel A. Cohen , Robert M. Farrell , Masahiro Ishida , Shuji Nakamura
- 申请人: Daniel F. Feezell , Daniel A. Cohen , Robert M. Farrell , Masahiro Ishida , Shuji Nakamura
- 申请人地址: US CA Oakland
- 专利权人: The Regents of the University of California
- 当前专利权人: The Regents of the University of California
- 当前专利权人地址: US CA Oakland
- 代理机构: Gates & Cooper LLP
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S3/08
摘要:
A vertical-cavity surface-emitting laser (VCSEL) comprising a low-loss thin metal contact and current spreading layer within the optical cavity that provides for improved ohmic contact and lateral current distribution, a substrate including a plano-concave optical cavity, a (Ga,In,Al)N multiple quantum well (MQW) active region contained within the optical cavity that generates light when injected by an electrical current, and an integrated micromirror fabricated onto the substrate that provides for optical mode control of the light generated by the active region. A relatively simple process is used to fabricate the VCSEL.
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