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1.发明授权公开(公告)号：US07480322B2
公开(公告)日：2009-01-20
申请号：US11803472
申请日：2007-05-15
CPC分类号： H01S5/18341 , H01S5/0207 , H01S5/0421 , H01S5/0425 , H01S5/18308 , H01S5/18388 , H01S5/32341
摘要： A vertical-cavity surface-emitting laser (VCSEL) comprising a low-loss thin metal contact and current spreading layer within the optical cavity that provides for improved ohmic contact and lateral current distribution, a substrate including a plano-concave optical cavity, a (Ga,In,Al)N multiple quantum well (MQW) active region contained within the optical cavity that generates light when injected by an electrical current, and an integrated micromirror fabricated onto the substrate that provides for optical mode control of the light generated by the active region. A relatively simple process is used to fabricate the VCSEL.
摘要翻译： 一种垂直腔表面发射激光器（VCSEL），其包括光腔内的低损耗薄金属接触和电流扩展层，其提供改善的欧姆接触和横向电流分布;衬底，包括平凹光学腔，（ Ga，In，Al）N多量子阱（MQW）有源区，其包含在通过电流注入时产生光的光腔内;以及集成微镜，其被制造到基板上，该微镜提供对由 活跃区域。 使用相对简单的过程来制造VCSEL。
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2.发明授权Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes 有权Al（x）Ga（1-x）不含氮包覆的非极性III族氮化物基激光二极管和发光二极管公开(公告)号：US09040327B2
公开(公告)日：2015-05-26
申请号：US13495231
申请日：2012-06-13
申请人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/00 , H01L29/06 , H01L33/32 , B82Y20/00 , H01L33/16 , H01L33/02 , H01L33/06 , H01S5/32 , H01S5/343
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。
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3.发明申请Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES 审中-公开Al（x）Ga（1-x）N型无铅非极性III型氮化物激光二极管和发光二极管公开(公告)号：US20120256158A1
公开(公告)日：2012-10-11
申请号：US13495231
申请日：2012-06-13
申请人： Daniel F. Feezell , Mathew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Mathew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/04
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。
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4.发明申请Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES 有权Al（x）Ga（1-x）N型无铅非极性III型氮化物激光二极管和发光二极管公开(公告)号：US20080191192A1
公开(公告)日：2008-08-14
申请号：US12030117
申请日：2008-02-12
申请人： Daniel F. Feezell , Matthew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Matthew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译： 一种用于制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。
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5.发明授权Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes 有权Al（x）Ga（1-x）不含氮包覆的非极性III族氮化物基激光二极管和发光二极管公开(公告)号：US08211723B2
公开(公告)日：2012-07-03
申请号：US12030117
申请日：2008-02-12
申请人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。
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公开(公告)号：US08790943B2
公开(公告)日：2014-07-29
申请号：US13593340
申请日：2012-08-23
CPC分类号： H01S5/3013 , B82Y20/00 , H01L21/02631 , H01L33/32 , H01S5/0215 , H01S5/0217 , H01S5/2009 , H01S5/2054 , H01S5/22 , H01S5/3211 , H01S5/3213 , H01S5/3214 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
摘要翻译： 一种制造（Al，Ga，In）N激光二极管的方法，包括在第一温度下在生长衬底上沉积一个或多个III-N层，在第一温度下沉积含有铟的激光芯， 温度，并且在抑制激光芯的退化的条件下执行所有随后的制造步骤，其中所述条件是比所述第二温度明显更低的温度。
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公开(公告)号：US20130215921A1
公开(公告)日：2013-08-22
申请号：US13593340
申请日：2012-08-23
CPC分类号： H01S5/3013 , B82Y20/00 , H01L21/02631 , H01L33/32 , H01S5/0215 , H01S5/0217 , H01S5/2009 , H01S5/2054 , H01S5/22 , H01S5/3211 , H01S5/3213 , H01S5/3214 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
摘要翻译： 一种制造（Al，Ga，In）N激光二极管的方法，包括在第一温度下在生长衬底上沉积一个或多个III-N层，在第一温度下沉积含有铟的激光芯， 温度，并且在抑制激光芯的退化的条件下执行所有随后的制造步骤，其中所述条件是比所述第二温度明显更低的温度。
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公开(公告)号：US20100142576A1
公开(公告)日：2010-06-10
申请号：US12476208
申请日：2009-06-01
CPC分类号： H01S5/3013 , B82Y20/00 , H01L21/02631 , H01L33/32 , H01S5/0215 , H01S5/0217 , H01S5/2009 , H01S5/2054 , H01S5/22 , H01S5/3211 , H01S5/3213 , H01S5/3214 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
摘要翻译： 一种制造（Al，Ga，In）N激光二极管的方法，包括在第一温度下在生长衬底上沉积一个或多个III-N层，在第一温度下沉积含有铟的激光芯， 温度，并且在抑制激光芯的退化的条件下执行所有随后的制造步骤，其中所述条件是比所述第二温度明显更低的温度。
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公开(公告)号：US08254423B2
公开(公告)日：2012-08-28
申请号：US12476208
申请日：2009-06-01
IPC分类号： H01S5/00
CPC分类号： H01S5/3013 , B82Y20/00 , H01L21/02631 , H01L33/32 , H01S5/0215 , H01S5/0217 , H01S5/2009 , H01S5/2054 , H01S5/22 , H01S5/3211 , H01S5/3213 , H01S5/3214 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
摘要翻译： 一种制造（Al，Ga，In）N激光二极管的方法，包括在第一温度下在生长衬底上沉积一个或多个III-N层，在第一温度下沉积含有铟的激光芯， 温度，并且在抑制激光芯的退化的条件下执行所有随后的制造步骤，其中所述条件是比所述第二温度明显更低的温度。
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公开(公告)号：USD560331S1
公开(公告)日：2008-01-29
申请号：US29266728
申请日：2006-09-28
申请人： Daniel A. Cohen
设计人： Daniel A. Cohen
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