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1.发明授权公开(公告)号：US07480322B2
公开(公告)日：2009-01-20
申请号：US11803472
申请日：2007-05-15
CPC分类号： H01S5/18341 , H01S5/0207 , H01S5/0421 , H01S5/0425 , H01S5/18308 , H01S5/18388 , H01S5/32341
摘要： A vertical-cavity surface-emitting laser (VCSEL) comprising a low-loss thin metal contact and current spreading layer within the optical cavity that provides for improved ohmic contact and lateral current distribution, a substrate including a plano-concave optical cavity, a (Ga,In,Al)N multiple quantum well (MQW) active region contained within the optical cavity that generates light when injected by an electrical current, and an integrated micromirror fabricated onto the substrate that provides for optical mode control of the light generated by the active region. A relatively simple process is used to fabricate the VCSEL.
摘要翻译： 一种垂直腔表面发射激光器（VCSEL），其包括光腔内的低损耗薄金属接触和电流扩展层，其提供改善的欧姆接触和横向电流分布;衬底，包括平凹光学腔，（ Ga，In，Al）N多量子阱（MQW）有源区，其包含在通过电流注入时产生光的光腔内;以及集成微镜，其被制造到基板上，该微镜提供对由 活跃区域。 使用相对简单的过程来制造VCSEL。
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2.发明授权Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes 有权Al（x）Ga（1-x）不含氮包覆的非极性III族氮化物基激光二极管和发光二极管公开(公告)号：US09040327B2
公开(公告)日：2015-05-26
申请号：US13495231
申请日：2012-06-13
申请人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/00 , H01L29/06 , H01L33/32 , B82Y20/00 , H01L33/16 , H01L33/02 , H01L33/06 , H01S5/32 , H01S5/343
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。
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3.发明申请Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES 审中-公开Al（x）Ga（1-x）N型无铅非极性III型氮化物激光二极管和发光二极管公开(公告)号：US20120256158A1
公开(公告)日：2012-10-11
申请号：US13495231
申请日：2012-06-13
申请人： Daniel F. Feezell , Mathew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Mathew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/04
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。
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4.发明申请Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES 有权Al（x）Ga（1-x）N型无铅非极性III型氮化物激光二极管和发光二极管公开(公告)号：US20080191192A1
公开(公告)日：2008-08-14
申请号：US12030117
申请日：2008-02-12
申请人： Daniel F. Feezell , Matthew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Matthew C. Schmidt , Kwang Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译： 一种用于制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。
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5.发明授权Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes 有权Al（x）Ga（1-x）不含氮包覆的非极性III族氮化物基激光二极管和发光二极管公开(公告)号：US08211723B2
公开(公告)日：2012-07-03
申请号：US12030117
申请日：2008-02-12
申请人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译： 一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。 由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。
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6.发明申请OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (Ga,Al,In,B)N DIODE LASERS 有权激光棒取向非极性和半导体（Ga，Al，In，B）N二极体激光器的优化公开(公告)号：US20080198881A1
公开(公告)日：2008-08-21
申请号：US12030124
申请日：2008-02-12
申请人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01S5/06
CPC分类号： H01S5/32341 , B82Y20/00 , H01S5/10 , H01S5/20 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.
摘要翻译： 非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。 光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。 为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。
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7.发明授权Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers 有权非极性和半极性（Ga，Al，In，B）N二极管激光器的激光棒取向优化公开(公告)号：US08588260B2
公开(公告)日：2013-11-19
申请号：US12908463
申请日：2010-10-20
申请人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Stephen P. DenBaars , Shuji Nakamura
发明人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Stephen P. DenBaars , Shuji Nakamura
IPC分类号： H01S3/10
CPC分类号： H01S5/32341 , B82Y20/00 , H01S5/10 , H01S5/20 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.
摘要翻译： 非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。 光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。 为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。
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8.发明申请OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (Ga,Al,In,B)N DIODE LASERS 有权激光棒取向非极性和半导体（Ga，Al，In，B）N二极体激光器的优化公开(公告)号：US20110032965A1
公开(公告)日：2011-02-10
申请号：US12908463
申请日：2010-10-20
申请人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Robert M. Farrell , Mathew C. Schmidt , Kwang Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
CPC分类号： H01S5/32341 , B82Y20/00 , H01S5/10 , H01S5/20 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.
摘要翻译： 非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。 光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。 为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。
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9.发明授权Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers 有权非极性和半极性（Ga，Al，In，B）N二极管激光器的激光棒取向优化公开(公告)号：US07839903B2
公开(公告)日：2010-11-23
申请号：US12030124
申请日：2008-02-12
申请人： Robert M. Farrell , Mathew C. Schmidt , Kwang-Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Robert M. Farrell , Mathew C. Schmidt , Kwang-Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01S3/10
CPC分类号： H01S5/32341 , B82Y20/00 , H01S5/10 , H01S5/20 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.
摘要翻译： 非极性或半极性III族氮化物二极管激光器的光学增益通过相对于二极管激光器的光学偏振方向或晶体取向定向光传播的轴来控制。 光传播的轴线基本上垂直于二极管激光器的镜面，并且光学偏振方向由二极管激光器的晶体取向决定。 为了使光学增益最大化，光传播的轴线基本上垂直于光学偏振方向或结晶取向。
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10.发明申请METHOD OF IMPROVING SURFACE MORPHOLOGY OF (GA,AL,IN,B)N THIN FILMS AND DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (GA,AL,IN,B)N SUBSTRATES 有权（GA，AL，IN，B）N薄膜和非阳极或二极体（GA，AL，IN，B）N底物上形成的表面形态的方法公开(公告)号：US20100219416A1
公开(公告)日：2010-09-02
申请号：US12716176
申请日：2010-03-02
CPC分类号： H01L21/02609 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/005 , H01L33/007 , H01L33/18 , H01L33/32 , H01S5/343 , Y10T428/31
摘要： A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates, wherein a (Ga,Al,In,B)N thin film is grown directly on a nonpolar or semipolar (Ga,Al,In,B)N substrate or template and a portion of the carrier gas used during growth is comprised of an inert gas. Nonpolar or semipolar nitride LEDs and diode lasers may be grown on the smooth (Ga,Al,In,B)N thin films grown by the present invention.
摘要翻译： （Ga，Al，In，B）N薄膜中的（Ga，Al，In，B）N薄膜的生长形态的改进方法，其中，（Ga，Al，In，B） 直接在非极性或半极性（Ga，Al，In，B）N底物或模板上生长，并且在生长期间使用的载体气体的一部分由惰性气体组成。 可以在由本发明生长的光滑（Ga，Al，In，B）N薄膜上生长非极性或半极性氮化物LED和二极管激光器。
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