- 专利标题: Method for forming a thin film
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申请号: US10131761申请日: 2002-04-23
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公开(公告)号: US07481882B2公开(公告)日: 2009-01-27
- 发明人: Seok-jun Won , Young-wook Park , Yong-woo Hyung
- 申请人: Seok-jun Won , Young-wook Park , Yong-woo Hyung
- 申请人地址: KR Kyungki-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Kyungki-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR1998-27663 19980709
- 主分类号: H01L21/285
- IPC分类号: H01L21/285 ; H01L27/10
摘要:
A method for forming a film includes forming the film on a substrate, followed by performing a first annealing of the film at a temperature lower than a crystallization temperature of the film. A second annealing of the film is performed at a temperature higher that the crystallization temperature. Forming the film and the first annealing of the film are performed in situ in a chamber. Alternatively, the first and second annealing are performed in situ in an apparatus.
公开/授权文献
- US20020115306A1 Method for forming a thin film 公开/授权日:2002-08-22
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