公开(公告)号：US06416584B1

公开(公告)日：2002-07-09

申请号：US09350407

申请日：1999-07-08

申请人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

发明人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

IPC分类号： C23C1600

CPC分类号： C23C16/56 ,  C23C16/405

摘要： An apparatus for forming a film on a substrate includes a reaction chamber and gas supply lines. The gas supply lines supply gases for depositing and annealing the film. Depositing a dielectric film and annealing the dielectric film are performed in situ using the reaction chamber. Thus, the time required for forming the dielectric film is shortened, improving the productivity. Also, deposition and annealing of the dielectric film are performed in the same reaction chamber, so that less area is required for manufacturing equipment.

摘要翻译： 在基板上形成膜的装置包括反应室和气体供给管线。 气体供应管线供应用于沉积和退火膜的气体。 使用反应室原位进行沉积介电膜并退火介电膜。 因此，缩短了形成电介质膜所需的时间，提高了生产率。 此外，电介质膜的沉积和退火在相同的反应室中进行，因此制造设备需要较少的面积。

公开(公告)号：US06207489B1

公开(公告)日：2001-03-27

申请号：US09393186

申请日：1999-09-10

申请人： Kab-jin Nam ,  Seok-jun Won ,  Ki-yeon Park ,  Yong-woo Hyung ,  Young-wook Park

发明人： Kab-jin Nam ,  Seok-jun Won ,  Ki-yeon Park ,  Yong-woo Hyung ,  Young-wook Park

IPC分类号： H01L218242

CPC分类号： H01L21/02183 ,  C03C23/0075 ,  H01L21/02271 ,  H01L21/0231 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/31604 ,  H01L27/1085 ,  H01L28/56

摘要： A method for manufacturing a capacitor having a dielectric film formed of a tantalum oxide film. The method includes forming a lower electrode that is electrically connected to an active region of a semiconductor substrate. A pre-treatment film including a component selected from a group consisting of silicon oxide, silicon nitride, and combinations thereof, is formed on the surface of the lower electrode. A dielectric film is formed on the pre-treatment film using a Ta precursor. The dielectric film includes a first dielectric layer deposited at a first temperature selected from a designated temperature range, and a second dielectric layer deposited at a second temperature different from the first temperature and selected from the same designated temperature range. A thermal treatment is thereafter performed on the dielectric film in an oxygen atmosphere.

摘要翻译： 一种制造具有由氧化钽膜形成的电介质膜的电容器的方法。 该方法包括形成电连接到半导体衬底的有源区的下电极。 在下电极的表面上形成包括选自氧化硅，氮化硅及其组合的组分的预处理膜。 使用Ta前体在预处理膜上形成电介质膜。 电介质膜包括在选自指定温度范围的第一温度下沉积的第一介电层和在与第一温度不同的第二温度下沉积并选自相同指定温度范围的第二电介质层。 此后在氧气氛中对电介质膜进行热处理。

公开(公告)号：US07481882B2

公开(公告)日：2009-01-27

申请号：US10131761

申请日：2002-04-23

申请人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

发明人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

IPC分类号： H01L21/285 ,  H01L27/10

CPC分类号： C23C16/56 ,  C23C16/405

摘要： A method for forming a film includes forming the film on a substrate, followed by performing a first annealing of the film at a temperature lower than a crystallization temperature of the film. A second annealing of the film is performed at a temperature higher that the crystallization temperature. Forming the film and the first annealing of the film are performed in situ in a chamber. Alternatively, the first and second annealing are performed in situ in an apparatus.

公开(公告)号：US06680251B2

公开(公告)日：2004-01-20

申请号：US10080000

申请日：2002-02-21

申请人： Seok-jun Won ,  Cha-young Yoo ,  Sung-tae Kim ,  Young-wook Park ,  Yun-jung Lee ,  Soon-yeon Park

发明人： Seok-jun Won ,  Cha-young Yoo ,  Sung-tae Kim ,  Young-wook Park ,  Yun-jung Lee ,  Soon-yeon Park

IPC分类号： H01L2144

CPC分类号： H01L21/28556 ,  C23C16/0272 ,  C23C16/40 ,  H01L21/28568 ,  H01L28/55 ,  H01L28/60

摘要： A layer is formed by chemical vapor depositing a seeding layer of ruthenium oxide on a substrate at a chemical vapor deposition flow rate ratio of a ruthenium source to oxygen gas. A main layer of ruthenium is chemical vapor deposited on the seeding layer by increasing the chemical vapor deposition flow rate ratio of the ruthenium source to the oxygen gas.

摘要翻译： 通过以钌源与氧气的化学气相沉积流速比在化学气相沉积基底上的氧化钌晶面层形成层。 钌的主层通过提高钌源与氧气的化学气相沉积流速比化学气相沉积在接种层上。

公开(公告)号：US6136641A

公开(公告)日：2000-10-24

申请号：US134063

申请日：1998-08-13

申请人： Seok-jun Won ,  Kab-jin Nam ,  Young-wook Park

发明人： Seok-jun Won ,  Kab-jin Nam ,  Young-wook Park

IPC分类号： H01L29/12 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/316 ,  H01L21/70

CPC分类号： H01L28/55 ,  H01L21/3105 ,  H01L21/31691

摘要： A capacitor fabricating method for a semiconductor device where a dielectric film is thermally treated under hydrogen atmosphere to improve interface characteristics between the dielectric film and an electrode. In the method, a lower electrode is formed on a semiconductor substrate. A dielectric film is formed on the lower electrode. The dielectric film is thermally treated under hydrogen atmosphere. An upper electrode is formed on the dielectric film, thereby completing formation of the capacitor. The thermal treatment under the hydrogen atmosphere is performed at a temperature of 300 to 600.degree. C. using H.sub.2 gas or H.sub.2 plasma for 5 to 60 minutes. Thus, the density of an interface trap between the electrode and the dielectric film of the capacitor is reduced.

摘要翻译： 一种用于半导体器件的电容器制造方法，其中在氢气氛下对电介质膜进行热处理以改善介电膜和电极之间的界面特性。 在该方法中，在半导体衬底上形成下电极。 在下电极上形成电介质膜。 电介质膜在氢气氛下进行热处理。 在电介质膜上形成上电极，从而形成电容器。 氢气氛下的热处理在300〜600℃的温度下，使用H2气或H2等离子体进行5〜60分钟。 因此，电容器的电极和电介质膜之间的界面陷阱的密度降低。

公开(公告)号：US6133148A

公开(公告)日：2000-10-17

申请号：US185093

申请日：1998-11-03

申请人： Seok-jun Won ,  Kyoung-hoon Kim ,  Young-wook Park ,  Kab-jin Nam ,  Duk-soo Yoon ,  Sun-woo Kwak

发明人： Seok-jun Won ,  Kyoung-hoon Kim ,  Young-wook Park ,  Kab-jin Nam ,  Duk-soo Yoon ,  Sun-woo Kwak

IPC分类号： H01L21/26 ,  C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  H01L21/285 ,  H01L21/314 ,  H01L21/44 ,  H01L21/31

CPC分类号： C23C16/45561 ,  C23C16/45557 ,  C23C16/481 ,  H01L21/28556 ,  H01L21/314 ,  Y10S438/907

摘要： A method of depositing a thin film for a semiconductor device using a lamp heating type apparatus. In the method, a wafer is loaded into a processing chamber of the apparatus, and the pressure of the chamber and the temperature of a susceptor installed in the chamber are increased to a level higher than a deposition pressure and a deposition temperature, respectively. Then, the pressure of the chamber and the temperature of the susceptor are decreased to the deposition pressure and the deposition temperature, respectively, and a film is deposited on the wafer. The vacuum of the chamber is then released and the gas remaining in the chamber and a source gas injection tube is purged.

摘要翻译： 一种使用灯加热型设备沉积半导体器件用薄膜的方法。 在该方法中，将晶片装载到装置的处理室中，并且将室的压力和安装在室中的基座的温度分别提高到高于沉积压力和沉积温度的水平。 然后，室的压力和基座的温度分别降低到沉积压力和沉积温度，并且膜沉积在晶片上。 然后释放室的真空，并且清除残留在室中的气体和源气体注入管。

公开(公告)号：US07892966B2

公开(公告)日：2011-02-22

申请号：US11859822

申请日：2007-09-24

申请人： Seok-jun Won ,  Andrew-tae Kim

发明人： Seok-jun Won ,  Andrew-tae Kim

IPC分类号： H01L21/4763

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is provided. A unit wiring level of the semiconductor device includes; first and second wiring layers spaced apart from each other on a support layer, a large space formed adjacent to the first wiring layer and including a first air gap of predetermined width as measured from a sidewall of the first wiring layer, and a portion of a thermally degradable material layer formed on the support layer, small space formed between the first and second wiring layers, wherein the small space is smaller than the large space, and a second air gap at least partially fills the small space, and a porous insulating layer formed on the first and second air gaps.

摘要翻译： 提供半导体器件。 半导体器件的单位布线层包括： 在支撑层上彼此间隔开的第一和第二布线层，与第一布线层相邻形成的大空间，并且包括从第一布线层的侧壁测量的预定宽度的第一气隙， 形成在支撑层上的热降解材料层，形成在第一和第二布线层之间的小空间，其中小空间小于大空间，第二气隙至少部分地填充小空间，多孔绝缘层 形成在第一和第二气隙上。

公开(公告)号：US07407897B2

公开(公告)日：2008-08-05

申请号：US11173624

申请日：2005-07-01

申请人： Seok-jun Won ,  Yong-kuk Jeong ,  Dae-jin Kwon ,  Min-woo Song ,  Weon-hong Kim

发明人： Seok-jun Won ,  Yong-kuk Jeong ,  Dae-jin Kwon ,  Min-woo Song ,  Weon-hong Kim

IPC分类号： H01L29/00

CPC分类号： H01L28/40 ,  H01L28/65 ,  Y10S438/957

摘要： In a capacitor of an analog semiconductor device having a multi-layer dielectric film and a method of manufacturing the same, the multi-layer dielectric film can be readily manufactured, has weak reactivity with corresponding electrodes and offers excellent leakage current characteristics. In order to obtain these advantages, a lower dielectric film having a negative quadratic VCC, an intermediate dielectric film having a positive quadratic VCC, and an upper dielectric film having a negative quadratic VCC are sequentially formed between a lower electrode and an upper electrode. The lower dielectric film and the upper dielectric film may be composed of SiO2. The intermediate dielectric film may be composed of HFO2.

摘要翻译： 在具有多层电介质膜的模拟半导体器件的电容器及其制造方法中，可以容易地制造多层电介质膜，与相应的电极具有弱反应性并提供优异的漏电流特性。 为了获得这些优点，在​​下电极和上电极之间顺序地形成具有负二次VCC的下电介质膜，具有正二次VCC的中间电介质膜和具有负二次VCC的上电介质膜。 下电介质膜和上电介质膜可以由SiO 2组成。 中间电介质膜可以由HFO 2 N 2构成。

公开(公告)号：US07042042B2

公开(公告)日：2006-05-09

申请号：US10665093

申请日：2003-09-17

申请人： Seok-jun Won ,  Cha-young Yoo

发明人： Seok-jun Won ,  Cha-young Yoo

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852

摘要： Integrated circuit capacitors are provided having an electrically insulating electrode support layer having an opening therein on an integrated circuit substrate. A U-shaped lower electrode is provided in the opening and a first capacitor dielectric layer extends on an inner surface and an outer portion of the U-shaped lower electrode. A second capacitor dielectric layer extends between the outer portion of the U-shaped lower electrode and the first capacitor dielectric and also extends between the outer portion of the U-shaped lower electrode and an inner sidewall of the opening. An upper electrode extends on the first dielectric layer.

摘要翻译： 提供集成电路电容器，其具有在集成电路基板上具有开口的电绝缘电极支撑层。 U形下电极设置在开口中，第一电容器电介质层在U形下电极的内表面和外部部分上延伸。 第二电容器电介质层在U形下电极的外部部分和第一电容器电介质之间延伸并且还在U形下电极的外部部分和开口的内侧壁之间延伸。 上电极在第一电介质层上延伸。

公开(公告)号：US06692795B2

公开(公告)日：2004-02-17

申请号：US10026205

申请日：2001-12-21

申请人： Seok-jun Won ,  Soon-yeon Park ,  Cha-young Yoo

发明人： Seok-jun Won ,  Soon-yeon Park ,  Cha-young Yoo

IPC分类号： C23C800

CPC分类号： H01L28/60 ,  C23C16/0281 ,  C23C16/18 ,  H01L21/28556 ,  H01L28/55

摘要： A method for fabricating a semiconductor device is provided. The method includes the steps of: forming an insulating layer having an opening region on a semiconductor substrate; forming a first ruthenium layer on the insulating layer and the opening region by sputtering at a first pressure; forming a second ruthenium layer on the first ruthenium layer by first chemical vapor deposition (CVD) at a first flow rate of oxygen gas and at a second pressure, wherein the second pressure is greater than the first pressure; and forming a third ruthenium layer on the second ruthenium layer by second CVD at a second flow rate of oxygen gas and at a third pressure, wherein the third pressure is greater than the first pressure.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括以下步骤：在半导体衬底上形成具有开口区域的绝缘层; 在第一压力下通过溅射在绝缘层和开口区域上形成第一钌层; 通过第一化学气相沉积（CVD）以第一氧气流量和第二压力在第一钌层上形成第二钌层，其中第二压力大于第一压力; 以及在所述第二钌层上通过第二CVD以第二流量的氧气和在第三压力下形成第三钌层，其中所述第三压力大于所述第一压力。