发明授权
US07482616B2 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
有权
具有相变存储单元的半导体器件,使用该半导体器件的电子系统及其制造方法
- 专利标题: Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
- 专利标题(中): 具有相变存储单元的半导体器件,使用该半导体器件的电子系统及其制造方法
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申请号: US11139283申请日: 2005-05-27
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公开(公告)号: US07482616B2公开(公告)日: 2009-01-27
- 发明人: Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
- 申请人: Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Marger Johnson & McCollom, P.C.
- 优先权: KR10-2004-0037965 20040527; KR10-2004-0105905 20041214; KR10-2005-0031662 20050415
- 主分类号: H01L29/02
- IPC分类号: H01L29/02
摘要:
In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.