Invention Grant
- Patent Title: Measurement of properties of thin films on sidewalls
- Patent Title (中): 测量侧壁薄膜的性能
-
Application No.: US11487433Application Date: 2006-07-17
-
Publication No.: US07483513B2Publication Date: 2009-01-27
- Inventor: Isaac Mazor , Boris Yokhin
- Applicant: Isaac Mazor , Boris Yokhin
- Applicant Address: IL Migdal Ha'emek
- Assignee: Jordan Valley Semiconductors, Ltd.
- Current Assignee: Jordan Valley Semiconductors, Ltd.
- Current Assignee Address: IL Migdal Ha'emek
- Agency: Smith, Gambrell & Russell, LLP
- Main IPC: G01N23/20
- IPC: G01N23/20
Abstract:
A method for X-ray analysis of a sample includes directing a beam of X-rays to impinge on an area of a periodic feature on a surface of the sample and receiving the X-rays scattered from the surface in a reflection mode so as to detect a spectrum of diffraction in the scattered X-rays as a function of azimuth. The spectrum of diffraction is analyzed in order to determine a dimension of the feature.
Public/Granted literature
- US20060274886A1 Measurement of properties of thin films on sidewalls Public/Granted day:2006-12-07
Information query
