Invention Grant
- Patent Title: Semiconductor manufacturing facility utilizing exhaust recirculation
- Patent Title (中): 利用排气再循环的半导体制造设备
-
Application No.: US11519681Application Date: 2006-09-12
-
Publication No.: US07485169B2Publication Date: 2009-02-03
- Inventor: W. Karl Olander , Joseph D. Sweeney , Luping Wang
- Applicant: W. Karl Olander , Joseph D. Sweeney , Luping Wang
- Applicant Address: US CT Danbury
- Assignee: Advanced Technology Materials, Inc.
- Current Assignee: Advanced Technology Materials, Inc.
- Current Assignee Address: US CT Danbury
- Agency: Intellectual Property Technology Law
- Agent Steven J. Hultquist; Maggie Chappuis
- Main IPC: F24F3/16
- IPC: F24F3/16 ; H01L21/00

Abstract:
A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility.
Public/Granted literature
- US20070062167A1 Semiconductor manufacturing facility utilizing exhaust recirculation Public/Granted day:2007-03-22
Information query