Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates
    5.
    发明授权
    Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates 有权
    从固体材料制备化合物或其中间体的装置和方法,以及使用这些化合物和中间体

    公开(公告)号:US09205392B2

    公开(公告)日:2015-12-08

    申请号:US13219706

    申请日:2011-08-28

    摘要: An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.

    摘要翻译: 描述了一种装置,其包括用于在有效形成中间产物的条件下使反应气体与反应性固体接触的反应区域,以及允许气态试剂和中间产物的未反应部分离开反应区域的开口。 该设备可以有利地用于形成作为中间产物和反应气体的反应产物的最终产物。 反应气体和反应性固体的反应可以在第一反应区进行,反应气体和中间产物的反应在第二反应区中进行。 在具体实施方案中,反应气体和中间产物的反应是可逆的,并且反应物气体和中间产物以受控的速率或受控的方式流到第二反应区,以抑制形成反应性固体的反应。

    APPARATUS AND METHOD FOR PREPARATION OF COMPOUNDS OR INTERMEDIATES THEREOF FROM A SOLID MATERIAL, AND USING SUCH COMPOUNDS AND INTERMEDIATES
    9.
    发明申请
    APPARATUS AND METHOD FOR PREPARATION OF COMPOUNDS OR INTERMEDIATES THEREOF FROM A SOLID MATERIAL, AND USING SUCH COMPOUNDS AND INTERMEDIATES 有权
    从固体材料中制备化合物或其中间体的装置和方法,以及使用这些化合物和中间体

    公开(公告)号:US20120051994A1

    公开(公告)日:2012-03-01

    申请号:US13219706

    申请日:2011-08-28

    IPC分类号: C01B35/06 G05B1/00 B01J19/00

    摘要: An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.

    摘要翻译: 描述了一种装置,其包括用于在有效形成中间产物的条件下使反应气体与反应性固体接触的反应区域,以及允许气态试剂和中间产物的未反应部分离开反应区域的开口。 该设备可以有利地用于形成作为中间产物和反应气体的反应产物的最终产物。 反应气体和反应性固体的反应可以在第一反应区进行,反应气体和中间产物的反应在第二反应区中进行。 在具体实施方案中,反应气体和中间产物的反应是可逆的,并且反应物气体和中间产物以受控的速率或受控的方式流到第二反应区,以抑制形成反应性固体的反应。

    ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS
    10.
    发明申请
    ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
    半导体加工系统中的离子源清洁

    公开(公告)号:US20110259366A1

    公开(公告)日:2011-10-27

    申请号:US12867245

    申请日:2009-02-11

    IPC分类号: B08B7/00 H01L21/265 B08B5/00

    摘要: Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.

    摘要翻译: 使用能够在电弧室的离子源中生长/蚀刻细丝的反应性清洁剂来清洁离子注入系统或其组分,通过适当地控制电弧室中的温度以实现所需的长丝生长或替代的细丝蚀刻 。 还描述了使用诸如XeFx,WFx,AsFx,PFx和TaFx的反应性气体,其中x具有化学计量学上适当的值或值范围,用于清除离子注入器或植入物的组分的原位或非原生境 清洁布置,在环境温度,升高的温度或等离子体条件下。 在特定的反应性清洁剂中,BrF3被描述为用于在原位或非原位清洁装置中清洁离子注入系统或其组分。 还描述了一种清洁离子注入系统的前沿以从所述前线至少部分去除电离相关沉积物的方法,包括使所述前沿与清洁气体接触,其中所述清洁气体与所述沉积物化学反应。 还描述了改进离子注入系统的性能和延长寿命的方法,包括使阴极与气体混合物接触。