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    Production of carbon nanotubes
    1.
    发明授权
    Production of carbon nanotubes 有权
    生产碳纳米管

    公开(公告)号：US08562937B2

    公开(公告)日：2013-10-22

    申请号：US12158318

    申请日：2006-12-19

    Applicant: J. Donald Carruthers ,  Xueping Xu ,  Luping Wang

    Inventor： J. Donald Carruthers ,  Xueping Xu ,  Luping Wang

    IPC: D01F9/127 ,  D01F9/12

    CPC classification number: B01J20/205 ,  B01J20/20 ,  B01J21/185 ,  B01J23/74 ,  B01J23/881 ,  B01J23/882 ,  B01J23/883 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/08 ,  C01B2202/36 ,  Y02P20/582

    Abstract: A method and apparatus for manufacture of carbon nanotubes, in which a substrate is contacted with a hydrocarbonaceous feedstock containing a catalytically effective metal to deposit the feedstock on the substrate, followed by oxidation of the deposited feedstock to remove hydrocarbonaceous and carbonaceous components from the substrate, while retaining the catalytically effective metal thereon, and contacting of the substrate having retained catalytically effective metal thereon with a carbon source material to grow carbon nanotubes on the substrate. The manufacture can be carried out with a petroleum feedstock such as an oil refining atmospheric tower residue, to produce carbon nanotubes in high volume at low cost. Also disclosed is a composite including porous material having single-walled carbon nanotubes in pores thereof.

    Abstract translation: 一种用于制造碳纳米管的方法和装置，其中将基底与含有催化有效金属的含烃原料接触以将原料沉积在基底上，随后氧化沉积的原料以从基底中除去含碳和碳质的组分， 同时在其上保留催化有效的金属，并且将具有保留的催化有效金属的基材与碳源材料接触以在基材上生长碳纳米管。 可以用石油原料如炼油大气塔渣进行制造，以低成本大量生产碳纳米管。 还公开了一种复合材料，其包括在其孔中具有单壁碳纳米管的多孔材料。

    Semiconductor manufacturing facility utilizing exhaust recirculation
    3.
    发明授权
    Semiconductor manufacturing facility utilizing exhaust recirculation 有权
    利用排气再循环的半导体制造设备

    公开(公告)号：US07857880B2

    公开(公告)日：2010-12-28

    申请号：US12364800

    申请日：2009-02-03

    Applicant: W. Karl Olander ,  Joseph D. Sweeney ,  Luping Wang

    Inventor： W. Karl Olander ,  Joseph D. Sweeney ,  Luping Wang

    IPC: B01D46/00

    CPC classification number: C23C14/48 ,  B01D53/74 ,  C23C14/564 ,  Y10S438/905 ,  Y10S438/909

    Abstract: A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility.

    Abstract translation: 一种半导体制造工艺设备，其中需要使用其中的排气用于其操作，这种设施包括洁净室和灰色房间部件，洁净室在其中具有至少一个半导体制造工具，并且其中排气流过干净的区域 房间。 该设施包括排气处理设备，其布置成（i）在其流过所述洁净室的所述区域之后接收排气，（ii）产生经处理的排气，以及（iii）将经处理的排气再循环到环境空气环境 在设施中，例如，到设施的灰色房间。

    Fluid storage and delivery system utilizing low heels carbon sorbent medium
    9.
    发明授权
    Fluid storage and delivery system utilizing low heels carbon sorbent medium 有权
    使用低跟鞋碳吸附剂介质的流体储存和输送系统

    公开(公告)号：US06592653B2

    公开(公告)日：2003-07-15

    申请号：US10020268

    申请日：2001-11-12

    Applicant: Luping Wang ,  Joseph Salsbury

    Inventor： Luping Wang ,  Joseph Salsbury

    IPC: B01D5304

    CPC classification number: B01D53/0407 ,  B01D2253/102 ,  B01D2259/40083 ,  B01D2259/4525 ,  B01D2259/455 ,  B01J20/20 ,  Y10S95/903

    Abstract: A fluid storage and dispensing system including a vessel containing a low heel carbon sorbent having fluid adsorbed thereon, with the system arranged to effect desorption of the fluid from the sorbent for dispensing of fluid on demand. The low heel carbon sorbent preferably is characterized by at least one of the following characteristics: (i) Heel, measured for gaseous arsine (AsH3) at 20° C. at 20 Torr, of not more than 50 grams AsH3 per liter of bed of the sorbent material; (ii) Heel, measured for gaseous boron trifluoride (BF3) at 20° C. at 20 Torr, of not more than 20 grams boron trifloride per liter of bed of the sorbent material; (iii) Heel, measured for gaseous germanium tetrafluoride (GeF4) at 20° C. at 20 Torr, of not more than 250 grams AsH3 per liter of bed of the sorbent material; (iv) Heel, measured for gaseous arsenic pentafluoride (AsF5) at 20° C. at 20 Torr, of not more than 700 grams AsF5 per liter of bed of the sorbent material; (v) Heel, measured for gaseous trimethyl silane (3MS) at 20° C. at 20 Torr, of not more than 160 grams 3MS per liter of bed of the sorbent material; and (vi) Heel, measured for gaseous ethane (C2H4) at 21° C. at 25 Torr, of not more than 10 grams ethane per liter of bed of the sorbent material.

    Abstract translation: 一种流体存储和分配系统，包括容纳含有吸附在其上的流体的低跟踪碳吸附剂的容器，该系统被设置成实现流体从吸附剂的解吸，用于根据需要分配流体。 优选地，低跟碳酸吸着剂的特征在于以下特征中的至少一个：（i）在20乇下在20℃下测量的气态胂（AsH 3）的鞋跟，每升床不超过50克AsH 3 吸附剂材料; （ii）在20乇下在20℃下测量气态三氟化硼（BF 3）的鞋跟，每升吸附剂材料床不超过20克三氯化硼; （iii）在20乇下在20℃下测量气态四氟化锗（GeF 4）的鞋跟，每升吸附剂材料床不超过250克AsH 3; （iv）在20乇下在20℃下测量气态五氧化二砷（AsF5）的鞋跟，每升吸附剂材料床不超过700克AsF5; （v）在20乇下在20℃下测量气态三甲基硅烷（3MS）的鞋跟，每升吸附剂材料床不超过160克3MS; 和（vi）在21℃，25乇下测量气态乙烷（C 2 H 4）的鞋跟，每升吸附剂材料床不超过10克乙烷。

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