发明授权
- 专利标题： Field effect device including inverted V shaped channel region and method for fabrication thereof
- 专利标题（中）： 包括倒V形沟道区域的场效应器件及其制造方法
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申请号： US11538174申请日： 2006-10-03
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公开(公告)号： US07485510B2公开(公告)日： 2009-02-03
- 发明人: Huilong Zhu , Ravikumar Ramachandran , Effendi Leobandung , Mahender Kumar , Wenjuan Zhu , Christine Norris
- 申请人： Huilong Zhu , Ravikumar Ramachandran , Effendi Leobandung , Mahender Kumar , Wenjuan Zhu , Christine Norris
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Todd M. C. Li, Esq.
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
A semiconductor structure includes a semiconductor layer that includes an inverted V shaped channel region that allows avoidance of a raised source/drain region within the semiconductor structure. In one embodiment, a generally conventional gate electrode is located over a planar surface of the semiconductor layer over the inverted V shaped channel region. In another embodiment, the foregoing generally conventional gate electrode is used in conjunction with an inverted V shaped gate electrode that is located within an inverted V shaped notch that comprises the inverted V shaped channel region.
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