发明授权
- 专利标题： Electrostatic discharge protection device
- 专利标题（中）： 静电放电保护装置
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申请号： US11459650申请日： 2006-07-25
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公开(公告)号： US07485905B2公开(公告)日： 2009-02-03
- 发明人: Feng-Chi Hung , Jian-Hsing Lee , Hung-Lin Chen , Deng-Shun Chang
- 申请人： Feng-Chi Hung , Jian-Hsing Lee , Hung-Lin Chen , Deng-Shun Chang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Thomas, Kayden, Horstemeyer & Risley
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L21/336
摘要：
An electrostatic discharge protection device comprising a multi-finger gate, a first lightly doped region of a second conductivity, a first heavily doped region of the second conductivity, and a second lightly doped region of the second conductivity. The multi-finger gate comprises a plurality of fingers mutually connected in parallel over an active region of a first conductivity. The first lightly doped region of a second conductivity is disposed in the semiconductor substrate and between two of the fingers. The first heavily doped region of the second conductivity is disposed in the first lightly doped region of the second conductivity. The second lightly doped region of the second conductivity is beneath and adjoins the first lightly doped region of the second conductivity.
公开/授权文献
- US20080023766A1 ELECTROSTATIC DISCHARGE PROTECTION DEVICE 公开/授权日：2008-01-31
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