Invention Grant
US07488664B2 Capacitor structure for two-transistor DRAM memory cell and method of forming same
有权
双晶体管DRAM存储单元的电容结构及其形成方法
- Patent Title: Capacitor structure for two-transistor DRAM memory cell and method of forming same
- Patent Title (中): 双晶体管DRAM存储单元的电容结构及其形成方法
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Application No.: US11200667Application Date: 2005-08-10
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Publication No.: US07488664B2Publication Date: 2009-02-10
- Inventor: Keith Cook , Ceredig Roberts
- Applicant: Keith Cook , Ceredig Roberts
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A capacitor structure for a semiconductor assembly and a method for forming same are described. The capacitor structure comprises a pair of electrically separated capacitor electrodes and a capacitor electrode being common to only the pair of electrically separated capacitor electrodes.
Public/Granted literature
- US20070034928A1 Capacitor structure for two-transistor dram memory cell and method of forming same Public/Granted day:2007-02-15
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