A power Schottky rectifier device and method of making the same are disclosed. The Schottky rectifier device includes a LOCOS structure grown on the bottom of the trenches by using nitride spacer on the sidewall of the trenches as a thermal oxidation mask. A polycrystalline silicon layer is then filled the first trenches. Under LOCOS structure, a p doped region is optionally formed to minimize the current leakage when the device undergoes a reverse biased. A Schottky barrier silicide layer formed by sputtering and annealing steps is formed on the upper surfaces of the epi-layer and the polycrystalline silicon layer. A top metal layer served as anode is then formed on the Schottky barrier silicide layer and extended to cover a portion of field oxide region of the termination trench. A metal layer served as a cathode electrode is then formed on the backside surface of the substrate opposite to the top metal layer.