发明授权
- 专利标题： Magnetic random access memory and operating method of the same
- 专利标题（中）： 磁性随机存取存储器和操作方法相同
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申请号： US11614231申请日： 2006-12-21
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公开(公告)号： US07492629B2公开(公告)日： 2009-02-17
- 发明人: Tadahiko Sugibayashi , Noboru Sakimura , Takeshi Honda
- 申请人： Tadahiko Sugibayashi , Noboru Sakimura , Takeshi Honda
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Whitham Curtis Christofferson & Cook, PC
- 优先权： JP2006-001794 20060106; JP2006-157574 20060606
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A semiconductor memory device is provided with a memory array including memory cells arranged in rows and columns; and a sense amplifier circuit. Each of the memory cells includes at least one magnetoresistive element storing data, and an amplifying member used to amplify a signal generated by a current through the at least one magnetoresistive element. The sense amplifier circuit identifies data stored in the at least one magnetoresistive element in response to an output signal of the amplifying member.