Invention Grant
- Patent Title: Semiconductor laser with a weakly coupled grating
- Patent Title (中): 具有弱耦合光栅的半导体激光器
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Application No.: US11393611Application Date: 2006-03-30
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Publication No.: US07494836B2Publication Date: 2009-02-24
- Inventor: Johann Peter Reithmaier , Lars Bach
- Applicant: Johann Peter Reithmaier , Lars Bach
- Applicant Address: DE Gerbrunn
- Assignee: Nanoplus GmbH
- Current Assignee: Nanoplus GmbH
- Current Assignee Address: DE Gerbrunn
- Agency: Michaelson & Associates
- Agent Peter L. Michaelson; George Wolken, Jr.
- Priority: EP0118970 20010806
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.
Public/Granted literature
- US20060172446A1 Semiconductor laser with a weakly coupled grating Public/Granted day:2006-08-03
Information query
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