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US07494940B2 Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices 有权
在集成电路器件中在界面层上形成高介电层的后热处理方法

Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices
Abstract:
High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates or ozone oxide layers over silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.
Abstract(Chinese):

可以将通过氧化，退火，氧化，氧化，氧化，氧化，氧化钇和/或其他金属氧化物和/或硅衬底上的其它金属氧化物和硅酸盐形成的高介电层氮化和后热处理， 或氧化和退火的组合以形成具有优异迁移率和界面特性的高介电层。

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