Invention Grant
US07495272B2 Semiconductor device having photo sensor element and amplifier circuit
有权
具有光电传感元件和放大电路的半导体器件
- Patent Title: Semiconductor device having photo sensor element and amplifier circuit
- Patent Title (中): 具有光电传感元件和放大电路的半导体器件
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Application No.: US10952914Application Date: 2004-09-30
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Publication No.: US07495272B2Publication Date: 2009-02-24
- Inventor: Junya Maruyama , Toru Takayama , Masafumi Morisue , Ryosuke Watanabe , Eiji Sugiyama , Susumu Okazaki , Kazuo Nishi , Jun Koyama , Takeshi Osada , Takanori Matsuzaki
- Applicant: Junya Maruyama , Toru Takayama , Masafumi Morisue , Ryosuke Watanabe , Eiji Sugiyama , Susumu Okazaki , Kazuo Nishi , Jun Koyama , Takeshi Osada , Takanori Matsuzaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Labortaory Co., Ltd.
- Current Assignee: Semiconductor Energy Labortaory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2003-347646 20031006
- Main IPC: H01L31/113
- IPC: H01L31/113

Abstract:
The area occupied by a photo-sensor element may be reduced and multiple elements may be integrated in a limited area so that the sensor element can have higher output and smaller size. Higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. A sensor element that can resist bending stress can be obtained.
Public/Granted literature
- US20050167573A1 Semiconductor device and manufacturing method thereof Public/Granted day:2005-08-04
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