公开(公告)号：US07495272B2

公开(公告)日：2009-02-24

申请号：US10952914

申请日：2004-09-30

申请人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

发明人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

IPC分类号： H01L31/113

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/14609 ,  H01L27/14665 ,  H01L2224/16225

摘要： The area occupied by a photo-sensor element may be reduced and multiple elements may be integrated in a limited area so that the sensor element can have higher output and smaller size. Higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. A sensor element that can resist bending stress can be obtained.

摘要翻译： 可以减少由光传感器元件占据的面积，并且可以在有限的区域中集成多个元件，使得传感器元件可以具有更高的输出和更小的尺寸。 通过使用非晶半导体膜（通常为非晶硅膜）的传感器元件和包括具有晶体结构的半导体膜（通常为多晶硅膜）的TFT的输出放大器电路来实现更高的输出和小型化，其被用作 在塑料膜基材上的能够抵抗诸如焊料回流工艺的安装过程中的温度的有源层。 可以获得能够抵抗弯曲应力的传感器元件。

公开(公告)号：US07932126B2

公开(公告)日：2011-04-26

申请号：US12349026

申请日：2009-01-06

申请人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

发明人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/14609 ,  H01L27/14665 ,  H01L2224/16225

摘要： The area occupied by a photo-sensor element may be reduced and multiple elements may be integrated in a limited area so that the sensor element can have higher output and smaller size. Higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. A sensor element that can resist bending stress can be obtained.

摘要翻译： 可以减少由光传感器元件占据的面积，并且可以在有限的区域中集成多个元件，使得传感器元件可以具有更高的输出和更小的尺寸。 通过使用非晶半导体膜（通常为非晶硅膜）的传感器元件和包括具有晶体结构的半导体膜（通常为多晶硅膜）的TFT的输出放大器电路来实现更高的输出和小型化，其被用作 在塑料膜基材上的能够抵抗诸如焊料回流工艺的安装过程中的温度的有源层。 可以获得能够抵抗弯曲应力的传感器元件。

公开(公告)号：US20090117681A1

公开(公告)日：2009-05-07

申请号：US12349026

申请日：2009-01-06

申请人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

发明人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

IPC分类号： H01L21/02 ,  H01L31/18

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/14609 ,  H01L27/14665 ,  H01L2224/16225

摘要： The object of the present invention is to miniaturize the area occupied by the element and to integrate a plenty of elements in a limited area so that the sensor element can have higher output and smaller size.In the present invention, higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. According to the present invention, the sensor element that can resist the bending stress can be obtained.

摘要翻译： 本发明的目的是使元件占据的面积小型化，并将大量的元件集成在有限的区域中，使传感器元件具有更高的输出和更小的尺寸。 在本发明中，通过使用非晶半导体膜（通常为非晶硅膜）的传感器元件和包括具有晶体结构的半导体膜（通常为多晶体）的TFT的输出放大器电路来实现更高的输出和小型化 硅膜）用作塑料膜基材上的活性层，其能够抵抗诸如焊料回流工艺的安装过程中的温度。 根据本发明，可以获得能够抵抗弯曲应力的传感器元件。

公开(公告)号：US20050167573A1

公开(公告)日：2005-08-04

申请号：US10952914

申请日：2004-09-30

申请人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

发明人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

IPC分类号： H01L27/146 ,  H01J40/14 ,  H01L21/82 ,  H01L27/14 ,  H01L31/00 ,  H01L31/10

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/14609 ,  H01L27/14665 ,  H01L2224/16225

摘要： The object of the present invention is to miniaturize the area occupied by the element and to integrate a plenty of elements in a limited area so that the sensor element can have higher output and smaller size. In the present invention, higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. According to the present invention, the sensor element that can resist the bending stress can be obtained.

摘要翻译： 本发明的目的是使元件占据的面积小型化，并将大量的元件集成在有限的区域中，使传感器元件具有更高的输出和更小的尺寸。 在本发明中，通过使用非晶半导体膜（通常为非晶硅膜）的传感器元件和包括具有晶体结构的半导体膜（通常为多晶体）的TFT的输出放大器电路来实现更高的输出和小型化 硅膜）用作塑料膜基材上的活性层，其能够抵抗诸如焊料回流工艺的安装过程中的温度。 根据本发明，可以获得能够抵抗弯曲应力的传感器元件。

公开(公告)号：US08039782B2

公开(公告)日：2011-10-18

申请号：US11829709

申请日：2007-07-27

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

IPC分类号： H01J40/14

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can be also reduced.

摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。

公开(公告)号：US20120025064A1

公开(公告)日：2012-02-02

申请号：US13271300

申请日：2011-10-12

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

IPC分类号： H01J40/14

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can also be reduced.

摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。

公开(公告)号：US08461509B2

公开(公告)日：2013-06-11

申请号：US13271300

申请日：2011-10-12

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

IPC分类号： H01J40/14

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can also be reduced.

摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。

公开(公告)号：US20070267665A1

公开(公告)日：2007-11-22

申请号：US11829709

申请日：2007-07-27

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

IPC分类号： H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can be also reduced.

摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。

公开(公告)号：US07253391B2

公开(公告)日：2007-08-07

申请号：US10939998

申请日：2004-09-14

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

IPC分类号： G01J1/44 ,  H03F3/08 ,  H01J40/14

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can be also reduced.

摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。

公开(公告)号：US20050082463A1

公开(公告)日：2005-04-21

申请号：US10939998

申请日：2004-09-14

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

IPC分类号： H01J40/14

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can be also reduced.

摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。