Invention Grant
US07495498B2 Radiation tolerant solid-state relay 有权
耐辐射固态继电器

  • Patent Title: Radiation tolerant solid-state relay
  • Patent Title (中): 耐辐射固态继电器
  • Application No.: US11328827
    Application Date: 2006-01-10
  • Publication No.: US07495498B2
    Publication Date: 2009-02-24
  • Inventor: Steven E. Summer
  • Applicant: Steven E. Summer
  • Agent Stephen E. Feldman
  • Main IPC: H03K17/687
  • IPC: H03K17/687
Radiation tolerant solid-state relay
Abstract:
The present invention provides a radiation-tolerant, solid-state-relay without radiation-hardened parts. In further detail, the solid-state-relay includes a non-hardened P-channel MOSFET, a low power storage of voltage gain and a feedback signal with the low power stage of voltage gain being relatively insensitive to radiation effects.
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