Invention Grant
- Patent Title: Radiation tolerant solid-state relay
- Patent Title (中): 耐辐射固态继电器
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Application No.: US11328827Application Date: 2006-01-10
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Publication No.: US07495498B2Publication Date: 2009-02-24
- Inventor: Steven E. Summer
- Applicant: Steven E. Summer
- Agent Stephen E. Feldman
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
The present invention provides a radiation-tolerant, solid-state-relay without radiation-hardened parts. In further detail, the solid-state-relay includes a non-hardened P-channel MOSFET, a low power storage of voltage gain and a feedback signal with the low power stage of voltage gain being relatively insensitive to radiation effects.
Public/Granted literature
- US20060176627A1 Radiation tolerant solid-state relay Public/Granted day:2006-08-10
Information query
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