Invention Grant
- Patent Title: Mixer for homodyne RF receiver
- Patent Title (中): 混音器用于零差RF接收机
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Application No.: US11314001Application Date: 2005-12-22
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Publication No.: US07499693B2Publication Date: 2009-03-03
- Inventor: Ying-Che Tseng , Nean-Chu Cheng
- Applicant: Ying-Che Tseng , Nean-Chu Cheng
- Applicant Address: TW Hsin Tien, Taipei Hsien
- Assignee: Via Technologies, Inc.
- Current Assignee: Via Technologies, Inc.
- Current Assignee Address: TW Hsin Tien, Taipei Hsien
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW94127633A 20050812
- Main IPC: H04B1/26
- IPC: H04B1/26 ; H04B15/00

Abstract:
A mixer of a homodyne RF receiver made from a CMOS process is provided. The mixer comprises a gain stage, a switch stage and a load stage. The gain stage receives a differential-typed RF signal and generating a first gained signal. The switch stage mixes the first gained signal and a LO signal to direct down-convert into a modulated signal. The load stage comprises a first transistor, an impedance element and a second transistor. The first transistor provides a low impedance to permit the modulated signal entering the load stage. The second transistor provides a high impedance to resist signals. The load stage converts the modulated signal to a second gained signal according to a first gain coefficient of the impedance element. The first transistor is a parallel pnp BJT, and the second transistor is a vertical npn bipolar BJT.
Public/Granted literature
- US20070037545A1 Mixer for homodyne RF receiver Public/Granted day:2007-02-15
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