Harmonic-rejection modulation device
    1.
    发明授权
    Harmonic-rejection modulation device 有权
    谐波抑制调制装置

    公开(公告)号:US07518459B2

    公开(公告)日:2009-04-14

    申请号:US11611256

    申请日:2006-12-15

    Abstract: A harmonic-rejection modulation device is provided, which includes a phase splitter, a low pass filter, and a modulator. Based on a square wave, the phase splitter generates a plurality of unfiltered local oscillating signals having phase angles of 0°, 30°, 90°, 120°, 180°, 210°, 270° and 300°, respectively. The low pass filter filters the high frequency components of the unfiltered local oscillating signals to generate a plurality of local oscillating signals having phase angles of 0°, 30°, 90°, 120°, 180°, 210°, 270° and 300°, respectively. The modulator modulates a baseband signal with the local oscillating signals, wherein the third harmonics of the local oscillating signals are eliminated by the modulation process of the modulator. The invention also provides a method of modulating a baseband signal.

    Abstract translation: 提供了一种谐波抑制调制装置,其包括相分离器,低通滤波器和调制器。 基于方波,分相器分别产生具有0°,30°,90°,120°,180°,210°,270°和300°的相位角的多个未滤波的本地振荡信号。 低通滤波器对未滤波的本地振荡信号的高频分量进行滤波,以产生具有0°,30°,90°,120°,180°,210°,270°和300°的相位角的多个本地振荡信号 , 分别。 调制器用本地振荡信号调制基带信号,其中通过调制器的调制过程消除本地振荡信号的三次谐波。 本发明还提供一种调制基带信号的方法。

    Mixer for homodyne RF receiver
    2.
    发明授权
    Mixer for homodyne RF receiver 有权
    混音器用于零差RF接收机

    公开(公告)号:US07499693B2

    公开(公告)日:2009-03-03

    申请号:US11314001

    申请日:2005-12-22

    CPC classification number: H04B1/30 H03D7/145 H03D7/165 H03D2200/0033

    Abstract: A mixer of a homodyne RF receiver made from a CMOS process is provided. The mixer comprises a gain stage, a switch stage and a load stage. The gain stage receives a differential-typed RF signal and generating a first gained signal. The switch stage mixes the first gained signal and a LO signal to direct down-convert into a modulated signal. The load stage comprises a first transistor, an impedance element and a second transistor. The first transistor provides a low impedance to permit the modulated signal entering the load stage. The second transistor provides a high impedance to resist signals. The load stage converts the modulated signal to a second gained signal according to a first gain coefficient of the impedance element. The first transistor is a parallel pnp BJT, and the second transistor is a vertical npn bipolar BJT.

    Abstract translation: 提供由CMOS工艺制成的零差RF接收机的混频器。 混频器包括增益级,开关级和负载级。 增益级接收差分型RF信号并产生第一增益信号。 开关级混合第一个获得的信号和一个LO信号,以将下变频转换成一个调制信号。 负载级包括第一晶体管,阻抗元件和第二晶体管。 第一晶体管提供低阻抗以允许调制信号进入负载级。 第二晶体管提供高阻抗以抵抗信号。 负载级根据阻抗元件的第一增益系数将调制信号转换为第二增益信号。 第一晶体管是并联pnp BJT,第二晶体管是垂直npn双极性BJT。

    HARMONIC-REJECTION MODULATION DEVICE
    3.
    发明申请
    HARMONIC-REJECTION MODULATION DEVICE 有权
    谐波抑制调制装置

    公开(公告)号:US20070242775A1

    公开(公告)日:2007-10-18

    申请号:US11611256

    申请日:2006-12-15

    Abstract: A harmonic-rejection modulation device is provided, which includes a phase splitter, a low pass filter, and a modulator. Based on a square wave, the phase splitter generates a plurality of unfiltered local oscillating signals having phase angles of 0°, 30°, 90°, 120°, 180°, 210°, 270° and 300°, respectively. The low pass filter filters the high frequency components of the unfiltered local oscillating signals to generate a plurality of local oscillating signals having phase angles of 0°, 30°, 90°, 120°, 180°, 210°, 270° and 300°, respectively. The modulator modulates a baseband signal with the local oscillating signals, wherein the third harmonics of the local oscillating signals are eliminated by the modulation process of the modulator. The invention also provides a method of modulating a baseband signal.

    Abstract translation: 提供了一种谐波抑制调制装置,其包括相分离器,低通滤波器和调制器。 基于方波,分相器分别产生具有0°,30°,90°,120°,180°,210°,270°和300°的相位角的多个未滤波的本地振荡信号。 低通滤波器对未滤波的本地振荡信号的高频分量进行滤波,以产生具有0°,30°,90°,120°,180°,210°,270°和300°的相位角的多个本地振荡信号 , 分别。 调制器用本地振荡信号调制基带信号,其中通过调制器的调制过程消除本地振荡信号的三次谐波。 本发明还提供一种调制基带信号的方法。

    Highly-linear signal-modulated voltage controlled oscillator
    4.
    发明申请
    Highly-linear signal-modulated voltage controlled oscillator 有权
    高线性信号调制压控振荡器

    公开(公告)号:US20060028281A1

    公开(公告)日:2006-02-09

    申请号:US11047835

    申请日:2005-01-31

    Abstract: A VCO system embodying the features of the present invention includes a frequency tuning circuit, a modulation circuit coupled in a parallel fashion with the frequency tuning circuit, a band tuning circuit coupled with the frequency tuning circuit in a parallel fashion having at least one switching circuit, a core circuit coupled with the frequency tuning circuit, the modulation circuit, and the band tuning circuit, wherein upon asserting a switching signal and upon adjusting a frequency turning signal, a frequency tuning bias signal, and a band tuning signal, the switching circuit is enabled for configuring the band tuning circuit to join the frequency tuning circuit for adjusting a predetermined output frequency based on a total inductance and a total capacitance provided by the core circuit, the frequency tuning circuit, the modulation circuit and the band tuning circuit.

    Abstract translation: 体现本发明特征的VCO系统包括频率调谐电路,与频率调谐电路并联耦合的调制电路,频带调谐电路,其与频率调谐电路并联连接,具有至少一个开关电路 与频率调谐电路,调制电路和频带调谐电路耦合的核心电路,其中在断言切换信号时,在调整频率转向信号,频率调谐偏置信号和频带调谐信号时,开关电路 用于配置频带调谐电路以基于由核心电路,频率调谐电路,调制电路和频带调谐电路提供的总电感和总电容来调整预定输出频率的频率调谐电路。

    Mixer for homodyne RF receiver
    5.
    发明申请
    Mixer for homodyne RF receiver 有权
    混音器用于零差RF接收机

    公开(公告)号:US20070037545A1

    公开(公告)日:2007-02-15

    申请号:US11314001

    申请日:2005-12-22

    CPC classification number: H04B1/30 H03D7/145 H03D7/165 H03D2200/0033

    Abstract: A mixer of a homodyne RF receiver made from a CMOS process is provided. The mixer comprises a gain stage, a switch stage and a load stage. The gain stage receives a differential-typed RF signal and generating a first gained signal. The switch stage mixes the first gained signal and a LO signal to direct down-convert into a modulated signal. The load stage comprises a first transistor, an impedance element and a second transistor. The first transistor provides a low impedance to permit the modulated signal entering the load stage. The second transistor provides a high impedance to resist signals. The load stage converts the modulated signal to a second gained signal according to a first gain coefficient of the impedance element. The first transistor is a parallel pnp BJT, and the second transistor is a vertical npn bipolar BJT.

    Abstract translation: 提供由CMOS工艺制成的零差RF接收机的混频器。 混频器包括增益级,开关级和负载级。 增益级接收差分型RF信号并产生第一增益信号。 开关级混合第一个获得的信号和一个LO信号,以将下变频转换成一个调制信号。 负载级包括第一晶体管,阻抗元件和第二晶体管。 第一晶体管提供低阻抗以允许调制信号进入负载级。 第二晶体管提供高阻抗以抵抗信号。 负载级根据阻抗元件的第一增益系数将调制信号转换为第二增益信号。 第一晶体管是并联pnp BJT,第二晶体管是垂直npn双极性BJT。

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