发明授权
- 专利标题： Plasma processing apparatus and method
- 专利标题（中）： 等离子体处理装置及方法
-
申请号： US11137516申请日： 2005-05-26
-
公开(公告)号： US07506610B2公开(公告)日： 2009-03-24
- 发明人: Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
- 申请人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2002-341949 20021126; JP2003-358425 20031017
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; C23F1/00 ; H01L21/306
摘要：
A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.
公开/授权文献
- US20050257743A1 Plasma processing apparatus and method 公开/授权日：2005-11-24
信息查询
IPC分类:
