发明授权
US07507988B2 Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layer
失效
包括基本上松弛的低缺陷密度SiGe层的半导体异质结构
- 专利标题： Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layer
- 专利标题（中）： 包括基本上松弛的低缺陷密度SiGe层的半导体异质结构
-
申请号： US11619040申请日： 2007-01-02
-
公开(公告)号： US07507988B2公开(公告)日： 2009-03-24
- 发明人: Stephen W. Bedell , Huajie Chen , Anthony G. Domenicucci , Keith E. Fogel , Devendra K. Sadana
- 申请人： Stephen W. Bedell , Huajie Chen , Anthony G. Domenicucci , Keith E. Fogel , Devendra K. Sadana
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Robert M. Trepp, Esq.
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
A heterostructure is provided which includes a substantially relaxed SiGe layer present atop an insulating region that is located on a substrate. The substantially relaxed SiGe layer has a thickness of from about 2000 nm or less, a measured lattice relaxation of from about 50 to about 80% and a defect density of less than about 108 defects/cm2. A strained epitaxial Si layer is located atop the substantially relaxed SiGe layer and at least one alternating stack including a bottom relaxed SiGe layer and an top strained Si layer located on the strained epitaxial Si layer.
公开/授权文献
- US20070105350A1 DEFECT REDUCTION BY OXIDATION OF SILICON 公开/授权日：2007-05-10
信息查询
IPC分类:
