发明授权
- 专利标题： Method for manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
-
申请号： US11454878申请日： 2006-06-19
-
公开(公告)号： US07510950B2公开(公告)日： 2009-03-31
- 发明人: Takuya Tsurume , Naoto Kusumoto
- 申请人： Takuya Tsurume , Naoto Kusumoto
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2005-192484 20050630
- 主分类号： H01L21/78
- IPC分类号： H01L21/78 ; H01L21/46 ; H01L21/301 ; H01L21/30 ; G06K19/06
摘要：
It is an object of the present invention to provide a method for manufacturing a semiconductor device, which is flexible and superiority in physical strength. As a method for manufacturing a semiconductor device, an element layer including a plurality of integrated circuits is formed over one surface of a substrate; a hole having curvature is formed in part of one surface side of the substrate; the substrate is thinned (for example, the other surface of the substrate is ground and polished); and the substrate is cut off so that a cross section of the substrate has curvature corresponding to a portion where the hole is formed; whereby a laminated body including an integrated circuit is formed. Further, a thickness of the substrate, which is polished, is 2 μm or more and 50 μm or less.
公开/授权文献
- US20070004082A1 Method for manufacturing semiconductor device 公开/授权日：2007-01-04
信息查询
IPC分类:
