发明授权
- 专利标题： Light emitting device and method of fabricating the same
- 专利标题（中）： 发光元件及其制造方法
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申请号： US10575853申请日： 2004-10-15
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公开(公告)号： US07511314B2公开(公告)日： 2009-03-31
- 发明人: Masato Yamada , Masayuki Shinohara , Masanobu Takahashi , Keizou Adomi , Jun Ikeda
- 申请人： Masato Yamada , Masayuki Shinohara , Masanobu Takahashi , Keizou Adomi , Jun Ikeda
- 申请人地址： JP Toyko
- 专利权人： Shin-Etsu Handotai Co., Ltd.
- 当前专利权人： Shin-Etsu Handotai Co., Ltd.
- 当前专利权人地址： JP Toyko
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2003-356955 20031016
- 国际申请： PCT/JP2004/015270 WO 20041015
- 国际公布： WO2005/038936 WO 20050428
- 主分类号： H01L29/26
- IPC分类号： H01L29/26
摘要：
Disclosed is a light-emitting device (100) has a light-emitting layer portion (24) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (90) with a thickness of not less than 40 μm which is formed on at least one major surface side of the light-emitting layer portion (24) and composed of a group III-V compound semiconductor having a band gap energy larger than the photon energy equivalent of the peak wavelength of emission flux from the light-emitting layer portion (24). The transparent thick-film semiconductor layer (90) has a lateral surface portion (90S) which is a chemically etched surface. The dopant concentration of the transparent thick-film semiconductor layer (90) is not less than 5×1016/cm3 and not more than 2×1018/cm3. The light-emitting device can have a transparent thick-film semiconductor layer while being significantly improved in light taking-out efficiency from the lateral surface portion.
公开/授权文献
- US20070145405A1 Light emitting device and method of fabricating the same 公开/授权日：2007-06-28
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