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公开(公告)号：US07511314B2
公开(公告)日：2009-03-31
申请号：US10575853
申请日：2004-10-15
IPC分类号： H01L29/26
CPC分类号： H01L33/30 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02505 , H01L21/02543 , H01L21/02579 , H01L21/0262 , H01L33/0079 , H01L33/14 , H01L33/405 , Y10S438/936
摘要： Disclosed is a light-emitting device (100) has a light-emitting layer portion (24) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (90) with a thickness of not less than 40 μm which is formed on at least one major surface side of the light-emitting layer portion (24) and composed of a group III-V compound semiconductor having a band gap energy larger than the photon energy equivalent of the peak wavelength of emission flux from the light-emitting layer portion (24). The transparent thick-film semiconductor layer (90) has a lateral surface portion (90S) which is a chemically etched surface. The dopant concentration of the transparent thick-film semiconductor layer (90) is not less than 5×1016/cm3 and not more than 2×1018/cm3. The light-emitting device can have a transparent thick-film semiconductor layer while being significantly improved in light taking-out efficiency from the lateral surface portion.
摘要翻译： 公开了一种发光器件（100），其具有由III-V族化合物半导体和厚度不小于40的透明厚膜半导体层（90）组成的发光层部分（24） 形成在发光层部分（24）的至少一个主表面侧上并且由具有比从其发射波长的峰值波长的光子能量当量的能隙大的III-V族化合物半导体构成的母体 发光层部分（24）。 透明厚膜半导体层（90）具有作为化学蚀刻表面的侧表面部分（90S）。 透明厚膜半导体层（90）的掺杂浓度为5×10 16 / cm 3以上2×10 18 / cm 3以下。 发光装置可以具有透明的厚膜半导体层，同时从侧面部分的光取出效率显着提高。
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公开(公告)号：US20070145405A1
公开(公告)日：2007-06-28
申请号：US10575853
申请日：2004-10-15
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02505 , H01L21/02543 , H01L21/02579 , H01L21/0262 , H01L33/0079 , H01L33/14 , H01L33/405 , Y10S438/936
摘要： Disclosed is a light-emitting device (100) has a light-emitting layer portion (24) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (90) with a thickness of not less than 40 μm which is formed on at least one major surface side of the light-emitting layer portion (24) and composed of a group III-V compound semiconductor having a band gap energy larger than the photon energy equivalent of the peak wavelength of emission flux from the light-emitting layer portion (24). The transparent thick-film semiconductor layer (90) has a lateral surface portion (90S) which is a chemically etched surface. The dopant concentration of the transparent thick-film semiconductor layer (90) is not less than 5×1016/cm3 and not more than 2×1018/cm3. The light-emitting device can have a transparent thick-film semiconductor layer while being significantly improved in light taking-out efficiency from the lateral surface portion.
摘要翻译： 公开了一种发光器件（100），其具有由III-V族化合物半导体和厚度不小于40的透明厚膜半导体层（90）组成的发光层部分（24） 形成在发光层部分（24）的至少一个主表面侧上并且由具有比从其来源的发射光束的峰值波长的光子能量当量的能隙大的III-V族化合物半导体构成的母体 发光层部分（24）。 透明厚膜半导体层（90）具有作为化学蚀刻表面的侧面部（90S）。 透明厚膜半导体层（90）的掺杂浓度为5×10 16 / cm 3以上，2×10 18 / / cm 3。 发光装置可以具有透明的厚膜半导体层，同时从侧面部分的光取出效率显着提高。
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公开(公告)号：US07589352B2
公开(公告)日：2009-09-15
申请号：US10577477
申请日：2004-11-04
申请人： Masato Yamada , Masanobu Takahashi
发明人： Masato Yamada , Masanobu Takahashi
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L24/32 , H01L24/33 , H01L33/0079 , H01L33/20 , H01L33/54 , H01L33/56 , H01L2224/32014 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/4823 , H01L2224/73265 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10158 , H01L2924/10329 , H01L2924/10336 , H01L2924/10349 , H01L2924/181 , H01L2924/00014 , H01L2924/01004 , H01L2924/01028 , H01L2924/01031 , H01L2924/00 , H01L2924/00012
摘要： A light emitting element (100) comprising an element chip (100C) provided, at least in a partial section in the thickness direction thereof, with a part of reduced cross-section where the cross sectional area decreases continuously or stepwise in the direction perpendicular to the thickness direction from the first major surface side toward the second major surface side. A part of a molded section (25) has a first mold layer (26) covering at least the part of reduced cross-section, and a second mold layer (25m) covering the outside of the first mold layer (26), wherein the first mold layer (26) is composed of a polymer mold material softer than that of the second mold layer (25m). A light emitting element, having such a structure that the element chip bonded onto a metal stage is not stripped easily even if mold resin expands, is thereby provided.
摘要翻译： 一种发光元件（100），其包括元件芯片（100C），所述元件芯片（100C）至少在其厚度方向上的部分截面中具有横截面减小的部分，其中所述横截面积沿垂直于 从第一主表面侧朝向第二主表面侧的厚度方向。 模制部分（25）的一部分具有覆盖至少部分减小横截面的第一模具层（26）和覆盖第一模具层（26）外部的第二模具层（25m），其中， 第一模层（26）由比第二模层（25m）更软的聚合物模具材料构成。 因此，具有如下结构的发光元件：即使模具树脂膨胀，也能容易地剥离接合在金属台上的元件芯片。
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公开(公告)号：US06995401B2
公开(公告)日：2006-02-07
申请号：US10690479
申请日：2003-10-22
申请人： Masato Yamada , Nobuhiko Noto , Masanobu Takahashi , Kingo Suzuki , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Masato Yamada , Nobuhiko Noto , Masanobu Takahashi , Kingo Suzuki , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L27/15
CPC分类号： H01L33/14 , H01L33/20 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , Y10S257/918 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded. Between the second-conductivity cladding layer and the oxide transparent electrode layer, a cushion layer composed of a compound semiconductor having a dopant concentration lower than that of the second-conductivity-type cladding layer is disposed.
摘要翻译： 公开了一种具有氧化物透明电极层作为发光驱动电极的发光元件，其设计成使得在电极线接合到接合焊盘时可能发生的损伤对于发光层部分影响较小。 发光器件具有由化合物半导体构成的发光层部分，并且具有双重异质结构，其中第一导电型包层，有源层和第二导电型包覆层依次层叠; 并且通过形成为覆盖第二导电型包层的主表面的氧化物透明电极层施加发光驱动电压。 在氧化物透明电极层上设置由金属构成的接合焊盘，并且接合用于电流供给用的电极线。 在第二导电率包层和氧化物透明电极层之间设置由掺杂剂浓度低于第二导电型包覆层的化合物半导体构成的缓冲层。
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公开(公告)号：US07972892B2
公开(公告)日：2011-07-05
申请号：US10590325
申请日：2005-02-25
申请人： Masato Yamada , Masanobu Takahashi
发明人： Masato Yamada , Masanobu Takahashi
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L24/32 , H01L33/405 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/49107 , H01L2224/73265 , H01L2224/92247 , Y10S438/97 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A composite growth-assisting substrate 10 is formed by epitaxially growing a separation-assisting compound semiconductor layer 10k composed of a non-GaAs III-V compound semiconductor single crystal, and then a sub-substrate 10e composed of a GaAs single crystal in this order, on a first main surface of a substrate bulk 10m composed of a GaAs single crystal. The sub-substrate portion 10e is then separated from the composite growth-assisting substrate 10, so as to be left as a residual substrate portion 1 on a second main surface of the main compound semiconductor layer 40, and a portion of the residual substrate portion 1 is cut off to thereby form a cut-off portion 1j having a bottom surface used as a light extraction surface. By this configuration, the light emitting device is provided as allowing effective use of the GaAs substrate, and increasing the light extraction efficiency.
摘要翻译： 通过外延生长由非GaAs III-V化合物半导体单晶组成的分离辅助化合物半导体层10k，然后依次由GaAs单晶构成的子基板10e，形成复合增长辅助基板10 在由GaAs单晶构成的衬底体10m的第一主表面上。 然后将副基板部分10e与复合增长辅助基板10分离，以便在主化合物半导体层40的第二主表面上作为剩余基板部分1留下，并且残留基板部分的一部分 切断1，从而形成具有用作光提取表面的底表面的截止部分1j。 通过这种配置，发光器件被设置为允许有效地使用GaAs衬底，并且提高光提取效率。
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6.发明授权Light emitting device having a pseudo-continuous spectrum and lighting apparatus using the same 失效具有伪连续光谱的发光器件和使用其的照明装置公开(公告)号：US07026651B2
公开(公告)日：2006-04-11
申请号：US10629737
申请日：2003-07-30
申请人： Masato Yamada , Masanobu Takahashi
发明人： Masato Yamada , Masanobu Takahashi
CPC分类号： H01L25/0753 , F21K9/232 , F21S6/001 , F21S8/04 , F21S10/04 , F21W2121/00 , F21W2131/109 , F21Y2115/10 , H01L33/06 , H01L33/08 , H01L33/483 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/09701 , H01L2933/0091 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A light emitting device capable of readily produce a pseudo-continuous spectrum covering a wide wavelength regions at low costs, and of totally solving various problems which have resided in the conventional light sources, and a lighting apparatus using this device is provided. The light emitting device 10 is configured so that an active layer in a double hetero light emitting layer portion composed of compound semiconductors comprises a plurality of emission unit layers differing from each other in band gap energy, and so as to emit a simulatively synthesized light having a pseudo-continuous spectrum ensuring an emission intensity of 5% or more of a peak intensity over a wavelength region of 50 nm or more.
摘要翻译： 提供一种能够以低成本容易地产生覆盖宽波长区域的伪连续光谱并且完全解决常规光源中存在的各种问题的发光器件以及使用该器件的照明装置。 发光器件10被配置为使得由化合物半导体构成的双异质发光层部分中的有源层包括在带隙能量上彼此不同的多个发射单元层，并且发射模拟合成的光，其具有 确保在50nm以上的波长区域的峰值强度的发光强度为5％以上的伪连续光谱。
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公开(公告)号：US20070187712A1
公开(公告)日：2007-08-16
申请号：US10590325
申请日：2005-02-25
申请人： Masato Yamada , Masanobu Takahashi
发明人： Masato Yamada , Masanobu Takahashi
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L24/32 , H01L33/405 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/49107 , H01L2224/73265 , H01L2224/92247 , Y10S438/97 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A composite growth-assisting substrate 10 is formed by epitaxially growing a separation-assisting compound semiconductor layer 10k composed of a non-GaAs III-V compound semiconductor single crystal, and then a sub-substrate 10e composed of a GaAs single crystal in this order, on a first main surface of a substrate bulk 10m composed of a GaAs single crystal. The sub-substrate portion 10e is then separated from the composite growth-assisting substrate 10, so as to be left as a residual substrate portion 1 on a second main surface of the main compound semiconductor layer 40, and a portion of the residual substrate portion 1 is cut off to thereby form a cut-off portion 1j having a bottom surface used as a light extraction surface. By this configuration, the light emitting device is provided as allowing effective use of the GaAs substrate, and increasing the light extraction efficiency.
摘要翻译： 通过外延生长由非GaAs III-V化合物半导体单晶组成的分离辅助化合物半导体层10k，然后由GaAs单晶组成的子基板10e，形成复合生长辅助衬底10 该顺序在由GaAs单晶构成的衬底体10m的第一主表面上。 然后将副基板部分10e从复合增长辅助基板10分离，以便在主化合物半导体层40的第二主表面上作为剩余基板部分1而残留基板部分 切断部分1，从而形成具有用作光提取表面的底表面的截止部分1j。 通过这种配置，发光器件被设置为允许有效地使用GaAs衬底，并且提高光提取效率。
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公开(公告)号：US20070126019A1
公开(公告)日：2007-06-07
申请号：US10577477
申请日：2004-11-04
申请人： Masato Yamada , Masanobu Takahashi
发明人： Masato Yamada , Masanobu Takahashi
CPC分类号： H01L33/62 , H01L24/32 , H01L24/33 , H01L33/0079 , H01L33/20 , H01L33/54 , H01L33/56 , H01L2224/32014 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/4823 , H01L2224/73265 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10158 , H01L2924/10329 , H01L2924/10336 , H01L2924/10349 , H01L2924/181 , H01L2924/00014 , H01L2924/01004 , H01L2924/01028 , H01L2924/01031 , H01L2924/00 , H01L2924/00012
摘要： A light emitting element (100) comprising an element chip (100C) provided, at least in a partial section in the thickness direction thereof, with a part of reduced cross-section where the cross sectional area decreases continuously or stepwise in the direction perpendicular to the thickness direction from the first major surface side toward the second major surface side. A part of a molded section (25) has a first mold layer (26) covering at least the part of reduced cross-section, and a second mold layer (25m) covering the outside of the first mold layer (26), wherein the first mold layer (26) is composed of a polymer mold material softer than that of the second mold layer (25m). A light emitting element, having such a structure that the element chip bonded onto a metal stage is not stripped easily even if mold resin expands, is thereby provided.
摘要翻译： 一种发光元件（100），包括元件芯片（100C），至少在其厚度方向上的部分截面中具有横截面减小的部分，其中横截面积在垂直方向上连续地或逐步地减小 从第一主表面侧朝向第二主表面侧的厚度方向。 模制部分（25）的一部分具有覆盖至少部分减小横截面的第一模具层（26）和覆盖第一模具层（26）外部的第二模具层（25μm），其中 第一模具层（26）由比第二模制层（25μm）更软的聚合物模制材料构成。 因此，具有如下结构的发光元件：即使模具树脂膨胀，也能容易地剥离接合在金属台上的元件芯片。
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公开(公告)号：US20110193261A1
公开(公告)日：2011-08-11
申请号：US13123678
申请日：2009-10-16
CPC分类号： H01L21/565 , B29C33/0088 , B29C33/20 , B29C33/30 , B29C43/18 , B29C43/34 , B29C43/36 , B29C2043/3411 , B29C2043/3602 , B29C2043/5825 , B29C2043/5833 , B29C2043/5841 , B29C2043/5858 , B29K2105/251 , H01L2924/0002 , H01L2924/00
摘要： The present invention aims at effectively decreasing the installation space of an entire semiconductor chip compression molding apparatus and effectively decreasing the clamping force in dies which are provided in the apparatus. It further aims at performing a clamping, in the case where substrates having a different thickness are used, with an efficient adjustment in accordance with the thicknesses of the substrates. To this end, the semiconductor chip compression molding includes two semiconductor chip compression molding dies (top and bottom dies), and a die opening/closing means for closing the die surfaces of top dies and those of bottom dies in each of the upper and lower dies. The die opening/closing means includes a die opening/closing mechanism having two racks and one pinion, and a thickness adjustment mechanism for adjusting the gaps in accordance with the thicknesses of the substrates supplied to each of the upper and lower dies.
摘要翻译： 本发明的目的在于有效地减少整个半导体芯片压缩成型设备的安装空间并且有效地降低设备中设置的管芯中的夹紧力。 进一步的目的是在使用具有不同厚度的基板的情况下，根据基板的厚度进行有效的调整来执行夹紧。 为此，半导体芯片压缩成型包括两个半导体芯片压缩成型模具（顶部和底部模具），以及用于封闭顶部模具的模具表面的模具打开/关闭装置和上部和下部的每个模具的模具表面 死了 模具打开/关闭装置包括具有两个齿条和一个小齿轮的模具打开/关闭机构，以及用于根据提供给每个上模具和下模具的基板的厚度来调节间隙的厚度调节机构。
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公开(公告)号：US20050122874A1
公开(公告)日：2005-06-09
申请号：US10502674
申请日：2003-01-28
CPC分类号： G11B20/1403 , G11B7/005 , G11B2007/0006
摘要： An optical disc controller for an optical disc drive playing optically a first information storage medium and a second information storage medium having a higher storage density than the first medium. The controller includes: a rotation control section for controlling a rotating mechanism rotating the media; an equalizer for removing first frequency range components from an RF playback signal, obtained by irradiating each media with light and detecting reflected light, and amplifying second frequency range components; and a phase locking section for generating a sync clock signal to do synchronization detection with a digital playback signal obtained by digitizing the output of the equalizer. The rotation control section rotates the media while controlling the rotating mechanism such that RF playback signals are obtained at first and second transfer rates. The maximum playback frequency of the RF playback signal obtained from the first medium at the first transfer rate is substantially equal to that of the RF playback signal obtained from the second medium at the second transfer rate.
摘要翻译： 一种用于光学驱动第一信息存储介质的光盘驱动器的光盘控制器和具有比第一介质更高的存储密度的第二信息存储介质。 控制器包括：旋转控制部分，用于控制旋转介质的旋转机构; 均衡器，用于从通过用光照射每个介质并检测反射光获得的RF重放信号中去除第一频率范围分量，以及放大第二频率范围分量; 以及相位锁定部分，用于产生同步时钟信号以通过数字化均衡器的输出而获得的数字播放信号进行同步检测。 旋转控制部在控制旋转机构的同时旋转介质，使得以第一和第二传送速率获得RF重放信号。 以第一传送速率从第一介质获得的RF重放信号的最大重放频率基本上等于以第二传送速率从第二媒体获得的RF重放信号的最大重放频率。
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