发明授权
- 专利标题: Semiconductor device and manufacturing method therefor
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11108729申请日: 2005-04-19
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公开(公告)号: US07511315B2公开(公告)日: 2009-03-31
- 发明人: Satoru Konishi , Tsuneo Endo , Hirokazu Nakajima , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura , Atsushi Kurokawa
- 申请人: Satoru Konishi , Tsuneo Endo , Hirokazu Nakajima , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura , Atsushi Kurokawa
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Mattingly, Stanger, Malur & Brundidge, P.C.
- 优先权: JP2004-142506 20040512
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L29/34 ; H01L23/48 ; H01L21/4763
摘要:
A semiconductor device has an external wiring for GND formed over an underside surface of a wiring substrate. A plurality of via holes connecting to the external wiring for GND are formed to penetrate the wiring substrate. A first semiconductor chip of high power consumption, including HBTs, is mounted over a principal surface of the wiring substrate. The emitter bump electrode of the first semiconductor chip is connected in common with emitter electrodes of a plurality of HBTs formed in the first semiconductor chip. The emitter bump electrode is extended in a direction in which the HBTs line up. The first semiconductor chip is mounted over the wiring substrate so that a plurality of the via holes are connected with the emitter bump electrode. A second semiconductor chip lower in heat dissipation value than the first semiconductor chip is mounted over the first semiconductor chip.
公开/授权文献
- US20050258452A1 Semiconductor device and manufacturing method therefor 公开/授权日:2005-11-24