发明授权
- 专利标题： Nickel alloy silicide including indium and a method of manufacture therefor
- 专利标题（中）： 包括铟的镍合金硅化物及其制造方法
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申请号： US12018313申请日： 2008-01-23
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公开(公告)号： US07511350B2公开(公告)日： 2009-03-31
- 发明人: Peijun J. Chen , Duofeng Yue , Amitabh Jain , Sue Crank , Thomas D. Bonifield , Homi Mogul
- 申请人： Peijun J. Chen , Duofeng Yue , Amitabh Jain , Sue Crank , Thomas D. Bonifield , Homi Mogul
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Warren J. Franz; Frederick J. Telecky, Jr.; Wade J. Brady, III
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
The invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a gate structure located over a substrate, the gate structure including a gate dielectric layer and gate electrode layer. The semiconductor device may further include source/drain regions located in/over the substrate and adjacent the gate structure, and a nickel alloy silicide located in the source/drain regions, the nickel alloy silicide having an amount of indium located therein.
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