发明授权
- 专利标题: High-frequency power amplifier
- 专利标题(中): 高频功率放大器
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申请号: US11682366申请日: 2007-03-06
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公开(公告)号: US07511575B2公开(公告)日: 2009-03-31
- 发明人: Seiki Gotou , Akira Inoue , Tetsuo Kunii , Toshikazu Oue
- 申请人: Seiki Gotou , Akira Inoue , Tetsuo Kunii , Toshikazu Oue
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Leydig, Voit & Mayer, Ltd.
- 优先权: JP2006-287964 20061023
- 主分类号: H03F3/68
- IPC分类号: H03F3/68
摘要:
A high-frequency power amplifier has an FET element having a unit FETs in multifinger form, and having a gate pad through which a signal is input, a source pad that is grounded, and a drain pad through which a signal is output. A high-frequency processing circuit includes series resonance circuits shunt-connected between the gate pads of the unit FETs and grounding ends. Two of the series resonance circuits have respective different resonance frequencies which correspond to second and higher harmonics of a frequency included in the operating frequency band of the FET element.
公开/授权文献
- US20080094141A1 HIGH-FREQUENCY POWER AMPLIFIER 公开/授权日:2008-04-24