公开(公告)号：US07511575B2

公开(公告)日：2009-03-31

申请号：US11682366

申请日：2007-03-06

申请人： Seiki Gotou ,  Akira Inoue ,  Tetsuo Kunii ,  Toshikazu Oue

发明人： Seiki Gotou ,  Akira Inoue ,  Tetsuo Kunii ,  Toshikazu Oue

IPC分类号： H03F3/68

CPC分类号： H03F3/604 ,  H03F3/211 ,  H03F2200/451 ,  H03F2203/21103 ,  H03F2203/21139 ,  H03F2203/21178

摘要： A high-frequency power amplifier has an FET element having a unit FETs in multifinger form, and having a gate pad through which a signal is input, a source pad that is grounded, and a drain pad through which a signal is output. A high-frequency processing circuit includes series resonance circuits shunt-connected between the gate pads of the unit FETs and grounding ends. Two of the series resonance circuits have respective different resonance frequencies which correspond to second and higher harmonics of a frequency included in the operating frequency band of the FET element.

摘要翻译： 高频功率放大器具有FET单元，其具有多频形式的单位FET，并且具有输入信号的栅极焊盘，接地的源极焊盘和输出信号的漏极焊盘。 高频处理电路包括分流连接在单元FET的栅极焊盘和接地端之间的串联谐振电路。 串联谐振电路中的两个具有对应于包括在FET元件的工作频带中的频率的第二和高次谐波的各自不同的谐振频率。

公开(公告)号：US20080094141A1

公开(公告)日：2008-04-24

申请号：US11682366

申请日：2007-03-06

申请人： Seiki GOTOU ,  Akira INOUE ,  Tetsuo KUNII ,  Toshikazu OUE

发明人： Seiki GOTOU ,  Akira INOUE ,  Tetsuo KUNII ,  Toshikazu OUE

IPC分类号： H03F3/68 ,  H03F3/191

CPC分类号： H03F3/604 ,  H03F3/211 ,  H03F2200/451 ,  H03F2203/21103 ,  H03F2203/21139 ,  H03F2203/21178

摘要： A high-frequency power amplifier has an FET element having a unit FETs in multifinger form, and having a gate pad through which a signal is input, a source pad that is grounded, and a drain pad through which a signal is output. A high-frequency processing circuit includes series resonance circuits shunt-connected between the gate pads of the unit FETs and grounding ends. Two of the series resonance circuits have respective different resonance frequencies which correspond to second and higher harmonics of a frequency included in the operating frequency band of the FET element.

摘要翻译： 高频功率放大器具有FET单元，其具有多频形式的单位FET，并且具有输入信号的栅极焊盘，接地的源极焊盘和输出信号的漏极焊盘。 高频处理电路包括分流连接在单元FET的栅极焊盘和接地端之间的串联谐振电路。 串联谐振电路中的两个具有对应于包括在FET元件的工作频带中的频率的第二和高次谐波的各自不同的谐振频率。