- 专利标题: Particle-measuring system and particle-measuring method
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申请号: US11782031申请日: 2007-07-24
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公开(公告)号: US07511814B2公开(公告)日: 2009-03-31
- 发明人: Hayashi Otsuki , Tsukasa Matsuda , Kyoko Ikeda
- 申请人: Hayashi Otsuki , Tsukasa Matsuda , Kyoko Ikeda
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP11-168968 19990615; JP2001-392703 20011225
- 主分类号: G01N21/00
- IPC分类号: G01N21/00
摘要:
The present invention provides a particle measuring system which is provided in a processing system 40 which generates an atmosphere obtained by exhausting air or a gas in a processing chamber 48 by a vacuum pump 98 and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe 90 which connects an exhaust opening 86 of the processing chamber 48 with the vacuum pump 98, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.
公开/授权文献
- US20070263217A1 PARTICLE-MEASURING SYSTEM AND PARTICLE-MEASURING METHOD 公开/授权日:2007-11-15
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