发明授权
US07514934B2 DC bias voltage measurement circuit and plasma CVD apparatus comprising the same
失效
直流偏置电压测量电路和等离子体CVD装置
- 专利标题： DC bias voltage measurement circuit and plasma CVD apparatus comprising the same
- 专利标题（中）： 直流偏置电压测量电路和等离子体CVD装置
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申请号： US11232532申请日： 2005-09-22
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公开(公告)号： US07514934B2公开(公告)日： 2009-04-07
- 发明人: Mitsutoshi Shuto , Yasuaki Suzuki
- 申请人： Mitsutoshi Shuto , Yasuaki Suzuki
- 申请人地址： JP Tokyo
- 专利权人： ASM Japan K.K.
- 当前专利权人： ASM Japan K.K.
- 当前专利权人地址： JP Tokyo
- 代理机构： Knobbe, Martens, Olson & Bear LLP
- 优先权： JP2004-275769 20040922
- 主分类号： G01R31/12
- IPC分类号： G01R31/12 ; H01H9/50
摘要：
A circuit for measuring DC bias voltage occurring in an ungrounded electrode of a plasma processing apparatus, includes: a first terminal connected between the ungrounded electrode and the RF power source; a second terminal for determining a value of the DC bias voltage; a first resistance connected between the first terminal and the second terminal; a second resistance connected between the second terminal and a ground; and a condenser disposed in parallel to the second resistance between the second terminal and the ground. The sum of the first resistance value and the second resistance value is about 50 MΩ or greater.