发明授权
US07518252B2 Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate, method of crystallization, apparatus for crystallization, thin-film semiconductor device, and method of manufacturing thin-film semiconductor device
失效
薄膜半导体衬底，薄膜半导体衬底的制造方法，结晶方法，结晶装置，薄膜半导体器件以及制造薄膜半导体器件的方法
- 专利标题： Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate, method of crystallization, apparatus for crystallization, thin-film semiconductor device, and method of manufacturing thin-film semiconductor device
- 专利标题（中）： 薄膜半导体衬底，薄膜半导体衬底的制造方法，结晶方法，结晶装置，薄膜半导体器件以及制造薄膜半导体器件的方法
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申请号： US11509605申请日： 2006-08-25
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公开(公告)号： US07518252B2公开(公告)日： 2009-04-14
- 发明人: Masato Hiramatsu , Yoshinobu Kimura , Hiroyuki Ogawa , Masayuki Jyumonji , Masakiyo Matsumura
- 申请人： Masato Hiramatsu , Yoshinobu Kimura , Hiroyuki Ogawa , Masayuki Jyumonji , Masakiyo Matsumura
- 申请人地址： JP Yokohama
- 专利权人： Advanced LCD Technologies Development Center Co., Ltd
- 当前专利权人： Advanced LCD Technologies Development Center Co., Ltd
- 当前专利权人地址： JP Yokohama
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2003-197824 20030716
- 主分类号： H01L23/28
- IPC分类号： H01L23/28 ; H01L29/04
摘要：
A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization.
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