Invention Grant
US07518916B2 Method and apparatus to program both sides of a non-volatile static random access memory
有权
对非易失性静态随机存取存储器的两侧进行编程的方法和装置
- Patent Title: Method and apparatus to program both sides of a non-volatile static random access memory
- Patent Title (中): 对非易失性静态随机存取存储器的两侧进行编程的方法和装置
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Application No.: US11644819Application Date: 2006-12-22
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Publication No.: US07518916B2Publication Date: 2009-04-14
- Inventor: Jayant Ashokkumar , David W. Still , James D. Allan , John Roger Gill
- Applicant: Jayant Ashokkumar , David W. Still , James D. Allan , John Roger Gill
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A system and method for programming both sides of the non-volatile portion in a semiconductor memory is disclosed. The present invention erases and then programs the memory stacks in the non-volatile portion of an nvSRAM.
Public/Granted literature
- US20080151616A1 Method and apparatus to program both sides of a non-volatile static random access memory Public/Granted day:2008-06-26
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