发明授权
- 专利标题: Method for selective removal of a layer
- 专利标题(中): 选择性去除层的方法
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申请号: US11738192申请日: 2007-04-20
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公开(公告)号: US07521314B2公开(公告)日: 2009-04-21
- 发明人: Dharmesh Jawarani , Konstantin V. Loiko , Andrew G. Nagy
- 申请人: Dharmesh Jawarani , Konstantin V. Loiko , Andrew G. Nagy
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理商 David G. Dolezal; Ranjeev Singh
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/336 ; H01L21/4763
摘要:
A method for forming a semiconductor device includes forming a liner over a semiconductor material including a control electrode. The method further includes forming a first spacer adjacent to the control electrode, wherein the first spacer has a first width. The method further includes implanting current electrode dopants. The method further includes removing the first spacer. The method further includes forming a second spacer adjacent the control electrode, wherein the second spacer has a second width and wherein the second width is less than the first width. The method further includes using the second spacer as a protective mask to selectively remove the liner. The method further includes forming a stressor layer overlying the control electrode and current electrode regions.
公开/授权文献
- US20080261385A1 METHOD FOR SELECTIVE REMOVAL OF A LAYER 公开/授权日:2008-10-23